Defect-induced tunable permittivity of epsilon-near-zero in indium tin oxide thin films

Defect-induced tunable permittivity of epsilon-near-zero in indium tin oxide thin films

Defect-induced tunable permittivity of Epsilon-Near-Zero (ENZ) in indium tin oxide (ITO) thin films via annealing at different temperatures with mixed gases (98% Ar, 2% O2) was reported. Red-shift of λENZ (Epsilon-Near-Zero wavelength) from 1422 nm to 1995 nm in wavelength was observed. The modulati...

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書目詳細資料
Main Authors:	Lian, Jiqing, Zhang, Dawei, Hong, Ruijin, Qiu, Peizhen, Lv, Taiguo, Zhang, Daohua
其他作者:	School of Electrical and Electronic Engineering
格式:	Article
語言:	English
出版:	2018
主題:	Epsilon-Near-Zero DRNTU::Engineering::Electrical and electronic engineering ITO Thin Films
在線閱讀:	https://hdl.handle.net/10356/88830 http://hdl.handle.net/10220/46977
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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