Defect-induced tunable permittivity of epsilon-near-zero in indium tin oxide thin films

• المؤلفون الرئيسيون: Lian, Jiqing, Zhang, Dawei, Hong, Ruijin, Qiu, Peizhen, Lv, Taiguo, Zhang, Daohua
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2018
• الموضوعات: Epsilon-Near-Zero; DRNTU::Engineering::Electrical and electronic engineering; ITO Thin Films
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/88830; http://hdl.handle.net/10220/46977
• المؤسسة: Nanyang Technological University

Defect-induced tunable permittivity of Epsilon-Near-Zero (ENZ) in indium tin oxide (ITO) thin films via annealing at different temperatures with mixed gases (98% Ar, 2% O2) was reported. Red-shift of λENZ (Epsilon-Near-Zero wavelength) from 1422 nm to 1995 nm in wavelength was observed. The modulati...