Electrochemically Driven Giant Resistive Switching in Perovskite Nickelates Heterostructures

The rich phase diagrams and peculiar physical properties of rare earth perovskite nickelates (RNiO3) have recently attracted much attention. Their electronic structures are highly sensitive to carrier density and bandwidth due to Mott physics. Here, the electrochemically driven giant resistive switc...

Full description

Saved in:
Bibliographic Details
Main Authors: Wang, Le, Zhang, Qinghua, Chang, Lei, You, Lu, He, Xu, Jin, Kuijuan, Gu, Lin, Guo, Haizhong, Ge, Chen, Feng, Yaqing, Wang, Junling
Other Authors: School of Materials Science & Engineering
Format: Article
Language:English
Published: 2018
Subjects:
Online Access:https://hdl.handle.net/10356/89334
http://hdl.handle.net/10220/44855
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: Nanyang Technological University
Language: English
Description
Summary:The rich phase diagrams and peculiar physical properties of rare earth perovskite nickelates (RNiO3) have recently attracted much attention. Their electronic structures are highly sensitive to carrier density and bandwidth due to Mott physics. Here, the electrochemically driven giant resistive switching in Pt/RNiO3/Nb‐SrTiO3 heterostructures is reported. Systematic investigation confirms that oxygen vacancies migration modifies the interfacial barrier at the RNiO3/Nb‐SrTiO3 interface and causes the resistive switching behavior. An ON/OFF ratio of about 105 at room temperature is observed, which can be modulated by controlling the oxygen vacancies during sample fabrication or by varying the rare earth element in RNiO3. The findings provide an important step forward toward the development of multifunctional electronic devices based on perovskite nickelates.