Silane-catalysed fast growth of large single-crystalline graphene on hexagonal boron nitride

• Main Authors: Tang, Shujie, Wang, Haomin, Wang, Hui Shan, Sun, Qiujuan, Zhang, Xiuyun, Cong, Chunxiao, Xie, Hong, Liu, Xiaoyu, Zhou, Xiaohao, Huang, Fuqiang, Chen, Xiaoshuang, Yu, Ting, Ding, Feng, Xie, Xiaoming, Jiang, Mianheng
• Other Authors: School of Physical and Mathematical Sciences
• Format: Article
• Language: English
• Published: 2018
• Subjects: DRNTU::Science::Physics; Quantum Hall; Surfaces, Interfaces and Thin Films
• Online Access: https://hdl.handle.net/10356/89338; http://hdl.handle.net/10220/46201
• Institution: Nanyang Technological University

The direct growth of high-quality, large single-crystalline domains of graphene on a dielectric substrate is of vital importance for applications in electronics and optoelectronics. Traditionally, graphene domains grown on dielectrics are typically only ~1 μm with a growth rate of ~1 nm min−1 or les...