Controlled synthesis of atomically layered hexagonal boron nitride via chemical vapor deposition
Hexagonal boron nitrite (h-BN) is an attractive material for many applications including electronics as a complement to graphene, anti-oxidation coatings, light emitters, etc. However, the synthesis of high-quality h-BN is still a great challenge. In this work, via controlled chemical vapor depositi...
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sg-ntu-dr.10356-895532023-07-14T15:52:46Z Controlled synthesis of atomically layered hexagonal boron nitride via chemical vapor deposition Liu, Juanjuan Liu, Zheng Kutty, Rajendrannair Govindan School of Materials Science & Engineering Centre for Programmable Materials Chemical Vapor Deposition Hexagonal Boron Nitride DRNTU::Engineering::Materials Hexagonal boron nitrite (h-BN) is an attractive material for many applications including electronics as a complement to graphene, anti-oxidation coatings, light emitters, etc. However, the synthesis of high-quality h-BN is still a great challenge. In this work, via controlled chemical vapor deposition, we demonstrate the synthesis of h-BN films with a controlled thickness down to atomic layers. The quality of as-grown h-BN is confirmed by complementary characterizations including high-resolution transition electron microscopy, atomic force microscopy, Raman spectroscopy and X-ray photo-electron spectroscopy. This work will pave the way for production of large-scale and high-quality h-BN and its applications as well. NRF (Natl Research Foundation, S’pore) MOE (Min. of Education, S’pore) Published version 2018-10-11T02:02:47Z 2019-12-06T17:28:15Z 2018-10-11T02:02:47Z 2019-12-06T17:28:15Z 2016 Journal Article Liu, J., Kutty, R. G., & Liu, Z. (2016). Controlled synthesis of atomically layered hexagonal boron nitride via chemical vapor deposition. Molecules, 21(12), 1636-. doi:10.3390/molecules21121636 1420-3049 https://hdl.handle.net/10356/89553 http://hdl.handle.net/10220/46274 10.3390/molecules21121636 en Molecules © 2016 by the authors; licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC-BY) license (http://creativecommons.org/licenses/by/4.0/). 8 p. application/pdf |
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Chemical Vapor Deposition Hexagonal Boron Nitride DRNTU::Engineering::Materials Liu, Juanjuan Liu, Zheng Kutty, Rajendrannair Govindan Controlled synthesis of atomically layered hexagonal boron nitride via chemical vapor deposition |
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Hexagonal boron nitrite (h-BN) is an attractive material for many applications including electronics as a complement to graphene, anti-oxidation coatings, light emitters, etc. However, the synthesis of high-quality h-BN is still a great challenge. In this work, via controlled chemical vapor deposition, we demonstrate the synthesis of h-BN films with a controlled thickness down to atomic layers. The quality of as-grown h-BN is confirmed by complementary characterizations including high-resolution transition electron microscopy, atomic force microscopy, Raman spectroscopy and X-ray photo-electron spectroscopy. This work will pave the way for production of large-scale and high-quality h-BN and its applications as well. |
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School of Materials Science & Engineering |
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School of Materials Science & Engineering Liu, Juanjuan Liu, Zheng Kutty, Rajendrannair Govindan |
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Article |
author |
Liu, Juanjuan Liu, Zheng Kutty, Rajendrannair Govindan |
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Liu, Juanjuan |
title |
Controlled synthesis of atomically layered hexagonal boron nitride via chemical vapor deposition |
title_short |
Controlled synthesis of atomically layered hexagonal boron nitride via chemical vapor deposition |
title_full |
Controlled synthesis of atomically layered hexagonal boron nitride via chemical vapor deposition |
title_fullStr |
Controlled synthesis of atomically layered hexagonal boron nitride via chemical vapor deposition |
title_full_unstemmed |
Controlled synthesis of atomically layered hexagonal boron nitride via chemical vapor deposition |
title_sort |
controlled synthesis of atomically layered hexagonal boron nitride via chemical vapor deposition |
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2018 |
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https://hdl.handle.net/10356/89553 http://hdl.handle.net/10220/46274 |
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