InPBi quantum dots for super-luminescence diodes

• Main Authors: Zhang, Liyao, Song, Yuxin, Chen, Qimiao, Zhu, Zhongyunshen, Wang, Shumin
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2018
• Subjects: DRNTU::Engineering::Electrical and electronic engineering; InPBi; Quantum Dot
• Online Access: https://hdl.handle.net/10356/89585; http://hdl.handle.net/10220/46294
• Institution: Nanyang Technological University

InPBi thin film has shown ultra-broad room temperature photoluminescence, which is promising for applications in super-luminescent diodes (SLDs) but met problems with low light emission efficiency. In this paper, InPBi quantum dot (QD) is proposed to serve as the active material for future InPBi SLDs. The quantum confinement for carriers and reduced spatial size of QD structure can improve light emission efficiently. We employ finite element method to simulate strain distribution inside QDs and use the result as input for calculating electronic properties. We systematically investigate different transitions involving carriers on the band edges and the deep levels as a function of Bi composition and InPBi QD geometry embedded in InAlAs lattice matched to InP. A flat QD shape with a moderate Bi content of a few percent over 3.2% would provide the optimal performance of SLDs with a bright and wide spectrum at a short center wavelength, promising for future optical coherence tomography applications.