Passive circuit designs toward terahertz using nanometer CMOS technology

This paper presents terahertz passive circuit design and investigation by using a 180 nanometer CMOS technology. A novel multimode bandpass filter and a power divider are designed by adopting a thin-film microstrip line, which uses silicon oxide layer of CMOS as the microstrip substrate. The circuit...

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Main Authors:	Ma, Kaixue, Zhang, Leyu, Yeo, Kiat Seng
Other Authors:	School of Electrical and Electronic Engineering
Format:	Conference or Workshop Item
Language:	English
Published:	2010
Subjects:	DRNTU::Engineering::Electrical and electronic engineering
Online Access:	https://hdl.handle.net/10356/90677 http://hdl.handle.net/10220/6287 http://ieeexplore.ieee.org/search/freesrchabstract.jsp?tp=&arnumber=5403789&queryText%3DPassive+Circuit+Designs+toward+Terahertz+using+Nanometer+CMOS+Technology%26openedRefinements%3D*%26searchField%3DSearch+All http://www.isic2009.org/
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Institution:	Nanyang Technological University
Language:	English

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spelling	sg-ntu-dr.10356-906772019-12-06T17:52:01Z Passive circuit designs toward terahertz using nanometer CMOS technology Ma, Kaixue Zhang, Leyu Yeo, Kiat Seng School of Electrical and Electronic Engineering IEEE International Symposium on Integrated Circuits (12th : 2009 : Singapore) DRNTU::Engineering::Electrical and electronic engineering This paper presents terahertz passive circuit design and investigation by using a 180 nanometer CMOS technology. A novel multimode bandpass filter and a power divider are designed by adopting a thin-film microstrip line, which uses silicon oxide layer of CMOS as the microstrip substrate. The circuit and fullwave electromagnetic results show that the proposed bandpass filter has a wide passband of 100~150GHz and a return loss of better than 14dB. The designed power divider can operate at 500GHz which is the first reported design using a 180nm CMOS process. Published version 2010-05-25T01:08:20Z 2019-12-06T17:52:01Z 2010-05-25T01:08:20Z 2019-12-06T17:52:01Z 2009 2009 Conference Paper Ma, K., Zhang, L., & Yeo, K. S. (2009). Passive circuit designs toward terahertz using nanometer CMOS technology. Integrated Circuits, ISIC '09. Proceedings of the 2009 12th International Symposium (pp.671-674). https://hdl.handle.net/10356/90677 http://hdl.handle.net/10220/6287 http://ieeexplore.ieee.org/search/freesrchabstract.jsp?tp=&arnumber=5403789&queryText%3DPassive+Circuit+Designs+toward+Terahertz+using+Nanometer+CMOS+Technology%26openedRefinements%3D*%26searchField%3DSearch+All http://www.isic2009.org/ en © 2009 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. http://www.ieee.org/portal/site This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. 5 p. application/pdf
institution	Nanyang Technological University
building	NTU Library
country	Singapore
collection	DR-NTU
language	English
topic	DRNTU::Engineering::Electrical and electronic engineering
spellingShingle	DRNTU::Engineering::Electrical and electronic engineering Ma, Kaixue Zhang, Leyu Yeo, Kiat Seng Passive circuit designs toward terahertz using nanometer CMOS technology
description	This paper presents terahertz passive circuit design and investigation by using a 180 nanometer CMOS technology. A novel multimode bandpass filter and a power divider are designed by adopting a thin-film microstrip line, which uses silicon oxide layer of CMOS as the microstrip substrate. The circuit and fullwave electromagnetic results show that the proposed bandpass filter has a wide passband of 100~150GHz and a return loss of better than 14dB. The designed power divider can operate at 500GHz which is the first reported design using a 180nm CMOS process.
author2	School of Electrical and Electronic Engineering
author_facet	School of Electrical and Electronic Engineering Ma, Kaixue Zhang, Leyu Yeo, Kiat Seng
format	Conference or Workshop Item
author	Ma, Kaixue Zhang, Leyu Yeo, Kiat Seng
author_sort	Ma, Kaixue
title	Passive circuit designs toward terahertz using nanometer CMOS technology
title_short	Passive circuit designs toward terahertz using nanometer CMOS technology
title_full	Passive circuit designs toward terahertz using nanometer CMOS technology
title_fullStr	Passive circuit designs toward terahertz using nanometer CMOS technology
title_full_unstemmed	Passive circuit designs toward terahertz using nanometer CMOS technology
title_sort	passive circuit designs toward terahertz using nanometer cmos technology
publishDate	2010
url	https://hdl.handle.net/10356/90677 http://hdl.handle.net/10220/6287 http://ieeexplore.ieee.org/search/freesrchabstract.jsp?tp=&arnumber=5403789&queryText%3DPassive+Circuit+Designs+toward+Terahertz+using+Nanometer+CMOS+Technology%26openedRefinements%3D*%26searchField%3DSearch+All http://www.isic2009.org/
_version_	1681038949409095680

Passive circuit designs toward terahertz using nanometer CMOS technology

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