Charge trapping and retention behaviors of Ge nanocrystals distributed in the gate oxide near the gate synthesized by low-energy ion implantation

• المؤلفون الرئيسيون: Yang, Ming, Chen, Tupei, Wong, Jen It, Ng, Chi Yung, Liu, Yang, Ding, Liang, Fung, Stevenson Hon Yuen, Trigg, Alastair David, Tung, Chih Hang, Li, Chang Ming
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2010
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics; DRNTU::Engineering::Chemical engineering::Biochemical engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/90699; http://hdl.handle.net/10220/6352
• المؤسسة: Nanyang Technological University

A layer of Ge nanocrystals (nc-Ge) distributed in the gate oxide near the gate of a metal-oxide-semiconductor structure is synthesized with low-energy Ge ion implantation followed by thermal annealing at 800 degrees celsius. The behaviors of charge trapping and charge retention in the nc-Ge have be...