A subthreshold low-noise amplifier optimized for ultra-low-power applications in the ISM band

The IEEE 802.15.4 standard relaxes the requirements on the receiver front-end making subthreshold operation a viable solution. The specification is discussed and guidelines are presented for a small area ultra-low-power design. A subthreshold biased low-noise amplifier (LNA) has been d...

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Main Authors:	Do, Aaron V., Boon, Chirn Chye, Do, Manh Anh, Yeo, Kiat Seng, Cabuk, Alper
Other Authors:	School of Electrical and Electronic Engineering
Format:	Article
Language:	English
Published:	2009
Subjects:	DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
Online Access:	https://hdl.handle.net/10356/91273 http://hdl.handle.net/10220/4678
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Institution:	Nanyang Technological University
Language:	English

id	sg-ntu-dr.10356-91273
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spelling	sg-ntu-dr.10356-912732020-03-07T14:02:38Z A subthreshold low-noise amplifier optimized for ultra-low-power applications in the ISM band Do, Aaron V. Boon, Chirn Chye Do, Manh Anh Yeo, Kiat Seng Cabuk, Alper School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits The IEEE 802.15.4 standard relaxes the requirements on the receiver front-end making subthreshold operation a viable solution. The specification is discussed and guidelines are presented for a small area ultra-low-power design. A subthreshold biased low-noise amplifier (LNA) has been designed and fabricated for the 2.4-GHz IEEE 802.15.4 standard using a standard low-cost 0.18- m RF CMOS process. The single-stage LNA saves on chip area by using only one inductor. The measured gain is more than 20 dB with an S11 of -19 dB while using 630 µA of dc current. The measured noise figure is 5.2 dB. Published version 2009-07-03T04:47:14Z 2019-12-06T18:02:43Z 2009-07-03T04:47:14Z 2019-12-06T18:02:43Z 2008 2008 Journal Article Do, A, V., Boon, C. C., Do, M. A., Yeo, K. S., & Cabuk, A. (2008). A subthreshold low-noise amplifier optimized for ultra-low-power applications in the ISM band. IEEE Transactions on Microwave Theory and Techniques, 56(2), 286-292. 0018-9480 https://hdl.handle.net/10356/91273 http://hdl.handle.net/10220/4678 10.1109/TMTT.2007.913366 136216 en IEEE transactions on microwave theory and techniques © 2008 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. http://www.ieee.org/portal/site This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. 7 p. application/pdf
institution	Nanyang Technological University
building	NTU Library
country	Singapore
collection	DR-NTU
language	English
topic	DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
spellingShingle	DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits Do, Aaron V. Boon, Chirn Chye Do, Manh Anh Yeo, Kiat Seng Cabuk, Alper A subthreshold low-noise amplifier optimized for ultra-low-power applications in the ISM band
description	The IEEE 802.15.4 standard relaxes the requirements on the receiver front-end making subthreshold operation a viable solution. The specification is discussed and guidelines are presented for a small area ultra-low-power design. A subthreshold biased low-noise amplifier (LNA) has been designed and fabricated for the 2.4-GHz IEEE 802.15.4 standard using a standard low-cost 0.18- m RF CMOS process. The single-stage LNA saves on chip area by using only one inductor. The measured gain is more than 20 dB with an S11 of -19 dB while using 630 µA of dc current. The measured noise figure is 5.2 dB.
author2	School of Electrical and Electronic Engineering
author_facet	School of Electrical and Electronic Engineering Do, Aaron V. Boon, Chirn Chye Do, Manh Anh Yeo, Kiat Seng Cabuk, Alper
format	Article
author	Do, Aaron V. Boon, Chirn Chye Do, Manh Anh Yeo, Kiat Seng Cabuk, Alper
author_sort	Do, Aaron V.
title	A subthreshold low-noise amplifier optimized for ultra-low-power applications in the ISM band
title_short	A subthreshold low-noise amplifier optimized for ultra-low-power applications in the ISM band
title_full	A subthreshold low-noise amplifier optimized for ultra-low-power applications in the ISM band
title_fullStr	A subthreshold low-noise amplifier optimized for ultra-low-power applications in the ISM band
title_full_unstemmed	A subthreshold low-noise amplifier optimized for ultra-low-power applications in the ISM band
title_sort	subthreshold low-noise amplifier optimized for ultra-low-power applications in the ism band
publishDate	2009
url	https://hdl.handle.net/10356/91273 http://hdl.handle.net/10220/4678
_version_	1681037256359411712

A subthreshold low-noise amplifier optimized for ultra-low-power applications in the ISM band

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