An injection-nulling switch for switched-capacitor circuit applications

• Main Authors: Chan, Pak Kwong, Lee, W. F.
• 其他作者: School of Electrical and Electronic Engineering
• 格式: Article
• 語言: English
• 出版: 2009
• 主題: DRNTU::Engineering::Electrical and electronic engineering
• 在線閱讀: https://hdl.handle.net/10356/91298; http://hdl.handle.net/10220/4624

This paper presents a new switch, the injection-nulling switch (INS), for minimizing both the charge injection error and the clock feedthrough error in switched-capacitor circuits. Comprised of two identically designed MOS transistors and a capacitor, INS benefits from using matching transistor characteristics, which result in an improvement in the reduction of switch errors on the conventional techniques. In this paper, the working mechanism of the INS technique and the analysis of the impact of nonideal effects on the switch are described. A comparison with other switch employments using sample-and-hold circuit implementation in AMS 0.6- m CMOS technology is also discussed. The simulation results have verified that the proposed method is insensitive to the nonideal effects. Besides, its effectiveness has also been validated by the experimental results.