Evidences for the depletion region induced by the polarization of ferroelectric semiconductors

Evidences for the depletion region induced by the polarization of ferroelectric semiconductors

Ferroelectric materials possess spontaneous polarization pointing from negative to positive bound surface charges. When a ferroelectric semiconductor is polarized, the induced electric field can drive free carriers, e.g., electrons in an n-type material, to neutralize surface charges until such fiel...

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Main Authors: Yuan, Guoliang, Wang, Junling
Other Authors: School of Materials Science & Engineering
Format: Article
Language:English
Published: 2011
Subjects:
DRNTU::Engineering::Materials::Magnetic materials
Online Access:https://hdl.handle.net/10356/91737
http://hdl.handle.net/10220/6860
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-917372023-07-14T15:49:07Z Evidences for the depletion region induced by the polarization of ferroelectric semiconductors Yuan, Guoliang Wang, Junling School of Materials Science & Engineering DRNTU::Engineering::Materials::Magnetic materials Ferroelectric materials possess spontaneous polarization pointing from negative to positive bound surface charges. When a ferroelectric semiconductor is polarized, the induced electric field can drive free carriers, e.g., electrons in an n-type material, to neutralize surface charges until such field becomes zero. Such diffusion of free carriers induces a depletion region. Polarization switch can move the depletion region to the opposite surface, thus it can be used to manipulate any properties that are affected by such depletion region, such as unidirectional current and photovoltaic current. Published version 2011-07-05T08:54:46Z 2019-12-06T18:11:05Z 2011-07-05T08:54:46Z 2019-12-06T18:11:05Z 2009 2009 Journal Article Yuan, G. L., & Wang, J. (2009). Evidences for the depletion region induced by the polarization of ferroelectric semiconductors. Applied Physics Letters, 95. https://hdl.handle.net/10356/91737 http://hdl.handle.net/10220/6860 10.1063/1.3268783 en Applied physics letters © 2009 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following DOI: http://dx.doi.org/10.1063/1.3268783. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic DRNTU::Engineering::Materials::Magnetic materials
spellingShingle DRNTU::Engineering::Materials::Magnetic materials
Yuan, Guoliang
Wang, Junling
Evidences for the depletion region induced by the polarization of ferroelectric semiconductors
description Ferroelectric materials possess spontaneous polarization pointing from negative to positive bound surface charges. When a ferroelectric semiconductor is polarized, the induced electric field can drive free carriers, e.g., electrons in an n-type material, to neutralize surface charges until such field becomes zero. Such diffusion of free carriers induces a depletion region. Polarization switch can move the depletion region to the opposite surface, thus it can be used to manipulate any properties that are affected by such depletion region, such as unidirectional current and photovoltaic current.
author2 School of Materials Science & Engineering
author_facet School of Materials Science & Engineering
Yuan, Guoliang
Wang, Junling
format Article
author Yuan, Guoliang
Wang, Junling
author_sort Yuan, Guoliang
title Evidences for the depletion region induced by the polarization of ferroelectric semiconductors
title_short Evidences for the depletion region induced by the polarization of ferroelectric semiconductors
title_full Evidences for the depletion region induced by the polarization of ferroelectric semiconductors
title_fullStr Evidences for the depletion region induced by the polarization of ferroelectric semiconductors
title_full_unstemmed Evidences for the depletion region induced by the polarization of ferroelectric semiconductors
title_sort evidences for the depletion region induced by the polarization of ferroelectric semiconductors
publishDate 2011
url https://hdl.handle.net/10356/91737
http://hdl.handle.net/10220/6860
_version_ 1772826034155028480

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