Influence of Si nanocrystal distributed in the gate oxide on the MOS capacitance

• Main Authors: Zhao, P., Yang, X. H., Ng, Chi Yung, Chen, Tupei, Ding, Liang, Yang, Ming, Wong, Jen It, Tse, Man Siu, Trigg, Alastair David, Fung, Stevenson Hon Yuen
• 其他作者: School of Electrical and Electronic Engineering
• 格式: Article
• 語言: English
• 出版: 2010
• 主題: DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
• 在線閱讀: https://hdl.handle.net/10356/91849; http://hdl.handle.net/10220/6403
• 機構: Nanyang Technological University

In this paper, the authors have studied the influence of silicon nanocrystal (nc-Si) distributed in the gate oxide on the capacitance for the circumstances that the nc-Si does not form conductive percolation tunneling paths connecting the gate to the substrate. The nc-Si is synthesized by Si-ion imp...