Influence of Si nanocrystal distributed in the gate oxide on the MOS capacitance

In this paper, the authors have studied the influence of silicon nanocrystal (nc-Si) distributed in the gate oxide on the capacitance for the circumstances that the nc-Si does not form conductive percolation tunneling paths connecting the gate to the substrate. The nc-Si is synthesized by Si-ion imp...

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Bibliographic Details
Main Authors: Zhao, P., Yang, X. H., Ng, Chi Yung, Chen, Tupei, Ding, Liang, Yang, Ming, Wong, Jen It, Tse, Man Siu, Trigg, Alastair David, Fung, Stevenson Hon Yuen
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2010
Subjects:
Online Access:https://hdl.handle.net/10356/91849
http://hdl.handle.net/10220/6403
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Institution: Nanyang Technological University
Language: English

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