Study of degradation mechanism of metal nanocrystal-based gate stacks

This thesis focuses on the degradation and reliability mechanism of the metal nanocrystal-based Al2O3/SiO2 gate stacks which is believed to be a promising candidate for next generation nonvolatile memory. A series of novel approaches were used to obtain in-depth knowledge of the gate stack in terms...

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Bibliographic Details
Main Author: Chen, Yining
Other Authors: Goh Kuan Eng, Johnson
Format: Theses and Dissertations
Language:English
Published: 2012
Subjects:
Online Access:https://hdl.handle.net/10356/49981
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Institution: Nanyang Technological University
Language: English