Study of degradation mechanism of metal nanocrystal-based gate stacks

• المؤلف الرئيسي: Chen, Yining
• مؤلفون آخرون: Goh Kuan Eng, Johnson
• التنسيق: Theses and Dissertations
• اللغة: English
• منشور في: 2012
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/49981

This thesis focuses on the degradation and reliability mechanism of the metal nanocrystal-based Al2O3/SiO2 gate stacks which is believed to be a promising candidate for next generation nonvolatile memory. A series of novel approaches were used to obtain in-depth knowledge of the gate stack in terms...