Study of degradation mechanism of metal nanocrystal-based gate stacks

• 主要作者: Chen, Yining
• 其他作者: Goh Kuan Eng, Johnson
• 格式: Theses and Dissertations
• 語言: English
• 出版: 2012
• 主題: DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
• 在線閱讀: https://hdl.handle.net/10356/49981
• 機構: Nanyang Technological University

This thesis focuses on the degradation and reliability mechanism of the metal nanocrystal-based Al2O3/SiO2 gate stacks which is believed to be a promising candidate for next generation nonvolatile memory. A series of novel approaches were used to obtain in-depth knowledge of the gate stack in terms...