Development of nanocrystal memory devices

• المؤلف الرئيسي: Chen, Tupei.
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: Research Report
• اللغة: English
• منشور في: 2008
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
• الوصول للمادة أونلاين: http://hdl.handle.net/10356/14231
• المؤسسة: Nanyang Technological University

In this project, we have fabricated non-volatile memory (NVM) devices based on silicon nanocrystals. The nanocrystals are synthesized with very-low energy ion beam technique, and the size of the nanocrystals is ~ 4 nm as determined from TEM measurement. The fabrication of the memory devices is fu...