Tight binding description on the band gap opening of pyrene-dispersed graphene
Opening up a band gap in graphene holds a crucial significance in the realization of graphene based electronics. Doping with organic molecules to alter the electronic properties of graphene is perceived as an effective band gap engineering approach. Using the tight binding model, we examined the ban...
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sg-ntu-dr.10356-920872023-07-14T15:49:12Z Tight binding description on the band gap opening of pyrene-dispersed graphene Chen, Dongmeng Shenai, Prathamesh Mahesh Zhao, Yang School of Materials Science & Engineering DRNTU::Engineering::Materials::Microelectronics and semiconductor materials Opening up a band gap in graphene holds a crucial significance in the realization of graphene based electronics. Doping with organic molecules to alter the electronic properties of graphene is perceived as an effective band gap engineering approach. Using the tight binding model, we examined the band gap opening of mono layer graphene due to the adsorption of pyrene molecules on both of its sides. It was found that the breakdown of the sublattice symmetry in pyrene-dispersed graphene leads to a band gap of ~10 meV. Accepted version 2011-03-03T08:03:09Z 2019-12-06T18:17:09Z 2011-03-03T08:03:09Z 2019-12-06T18:17:09Z 2011 2011 Journal Article Chen, D. M., Shenai, P. M., & Zhao, Y. (2011). Tight Binding Description on Band Gap Opening of Pyrene-dispersed Graphene. Physical Chemistry Chemical Physics, 13, 1515-1520. https://hdl.handle.net/10356/92087 http://hdl.handle.net/10220/6735 10.1039/C0CP00909A 153760 en Physical chemistry chemical physics © 2011 Royal Society of Chemistry. This is the author created version of a work that has been peer reviewed and accepted for publication by Physical Chemistry Chemical Physics, Royal Society of Chemistry. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [DOI: http://dx.doi.org/10.1039/C0CP00909A ] 6 p. application/pdf |
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DRNTU::Engineering::Materials::Microelectronics and semiconductor materials Chen, Dongmeng Shenai, Prathamesh Mahesh Zhao, Yang Tight binding description on the band gap opening of pyrene-dispersed graphene |
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Opening up a band gap in graphene holds a crucial significance in the realization of graphene based electronics. Doping with organic molecules to alter the electronic properties of graphene is perceived as an effective band gap engineering approach. Using the tight binding model, we examined the band gap opening of mono layer graphene due to the adsorption of pyrene molecules on both of its sides. It was found that the breakdown of the sublattice symmetry in pyrene-dispersed graphene leads to a band gap of ~10 meV. |
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School of Materials Science & Engineering |
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School of Materials Science & Engineering Chen, Dongmeng Shenai, Prathamesh Mahesh Zhao, Yang |
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Article |
author |
Chen, Dongmeng Shenai, Prathamesh Mahesh Zhao, Yang |
author_sort |
Chen, Dongmeng |
title |
Tight binding description on the band gap opening of pyrene-dispersed graphene |
title_short |
Tight binding description on the band gap opening of pyrene-dispersed graphene |
title_full |
Tight binding description on the band gap opening of pyrene-dispersed graphene |
title_fullStr |
Tight binding description on the band gap opening of pyrene-dispersed graphene |
title_full_unstemmed |
Tight binding description on the band gap opening of pyrene-dispersed graphene |
title_sort |
tight binding description on the band gap opening of pyrene-dispersed graphene |
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2011 |
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https://hdl.handle.net/10356/92087 http://hdl.handle.net/10220/6735 |
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1772825506037628928 |