A wideband low power low-noise amplifier in CMOS technology

• Main Authors: Meaamar, Ali, Boon, Chirn Chye, Yeo, Kiat Seng, Do, Manh Anh
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2010
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits
• Online Access: https://hdl.handle.net/10356/92090; http://hdl.handle.net/10220/6280
• Institution: Nanyang Technological University

A T-coil network can be implemented as a high order filter for bandwidth extension. This technique is incorporated into the design of the input matching and output peaking networks of a low-noise amplifier. The intrinsic capacitances within the transistors are exploited as a part of the wideband structure to extend the bandwidth. Using the proposed topology, a wideband low-noise amplifier with a bandwidth of 3–8 GHz, a maximum gain of 16.4 dB and noise figure of 2.9 dB (min) is achieved. The total power consumption of the wideband low-noise amplifier from the 1.8 V power supply is 3.9 mW. The prototype is fabricated in 0.18 µm CMOS technology.