A 3-8 GHz low-noise CMOS amplifier

A 3-8 GHz low-noise CMOS amplifier

A wideband CMOS low-noise amplifier (LNA) is...

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Bibliographic Details
Main Authors:	Meaamar, Ali, Boon, Chirn Chye, Do, Manh Anh, Yeo, Kiat Seng
Other Authors:	School of Electrical and Electronic Engineering
Format:	Article
Language:	English
Published:	2010
Subjects:	DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
Online Access:	https://hdl.handle.net/10356/92091 http://hdl.handle.net/10220/6250
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Institution:	Nanyang Technological University
Language:	English

Description
Summary:	A wideband CMOS low-noise amplifier (LNA) is proposed by using the concept of mutual coupling technique implemented through a symmetric center-tap inductor. A frequency widening network is designed with a center-tap inductor at the input and the output of an LNA to achieve bandwidth extension with a single stage amplifier. The proposed wideband low noise amplifier is implemented in the 0.18 um CMOS technology. This design obtains a bandwidth of 3–8 GHz with a power consumption of 3.77 mW from a 1.8 V supply.