A 3-8 GHz low-noise CMOS amplifier

• المؤلفون الرئيسيون: Meaamar, Ali, Boon, Chirn Chye, Do, Manh Anh, Yeo, Kiat Seng
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2010
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/92091; http://hdl.handle.net/10220/6250

A wideband CMOS low-noise amplifier (LNA) is proposed by using the concept of mutual coupling technique implemented through a symmetric center-tap inductor. A frequency widening network is designed with a center-tap inductor at the input and the output of an LNA to achieve bandwidth extension with a single stage amplifier. The proposed wideband low noise amplifier is implemented in the 0.18 um CMOS technology. This design obtains a bandwidth of 3–8 GHz with a power consumption of 3.77 mW from a 1.8 V supply.