Mono-distributed single-walled carbon nanotube channel in field effect transistors (FETs) using electrostatic atomization deposition

Mono-distributed single-walled carbon nanotube channel in field effect transistors (FETs) using electrostatic atomization deposition

This communication reports on the novel work of creating a transistor channel based on functionalized single-walled carbon nanotubes (SWNTs) via electrostatic atomization deposition. The current method of...

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Bibliographic Details
Main Authors:	Fam, Derrick Wen Hui, Tok, Alfred Iing Yoong
Other Authors:	School of Materials Science & Engineering
Format:	Article
Language:	English
Published:	2011
Subjects:	DRNTU::Engineering::Materials::Nanostructured materials
Online Access:	https://hdl.handle.net/10356/92386 http://hdl.handle.net/10220/6959
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Institution:	Nanyang Technological University
Language:	English

Description
Summary:	This communication reports on the novel work of creating a transistor channel based on functionalized single-walled carbon nanotubes (SWNTs) via electrostatic atomization deposition. The current method of drop-cast though convenient was unable to produce replicable transistor device due to its inherent inability in controlling the volume of liquid being drop-cast. Hence, this method of electrostatic atomization was introduced to consistently obtain a uniformly distributed SWNT channel resulting in a good transistor device.