Average density of states in disordered graphene systems

In this paper, the average density of states (ADOS) in graphene with binary alloy disorders is calculated by the recursion method. We observed an obvious resonant peak and a dip in ADOS curves near the Dirac point, which result from interactions with surrounding impurities. We also found that the re...

全面介紹

Saved in:
書目詳細資料
Main Authors: Wu, Shangduan, Jing, Lei, Li, Qunxiang, Shi, Q. W., Chen, Jie, Su, Haibin, Wang, Xiaoping, Yang, Jinlong
其他作者: School of Materials Science & Engineering
格式: Article
語言:English
出版: 2011
主題:
在線閱讀:https://hdl.handle.net/10356/93833
http://hdl.handle.net/10220/6906
標簽: 添加標簽
沒有標簽, 成為第一個標記此記錄!
機構: Nanyang Technological University
語言: English
實物特徵
總結:In this paper, the average density of states (ADOS) in graphene with binary alloy disorders is calculated by the recursion method. We observed an obvious resonant peak and a dip in ADOS curves near the Dirac point, which result from interactions with surrounding impurities. We also found that the resonance energy (Er) and the dip position (εdip) are strongly dependent on the concentration of disorders (x) and their on-site potentials (v). A linear relation, εdip=xv, holds when the impurity concentration is low. This relation can also be extended when the impurity concentration is high, but with certain constraints. We also compute ADOS with a finite density of vacancies.