Wide-bandgap Zn2GeO4 nanowire networks as efficient ultraviolet photodetectors with fast response and recovery time
Ultraviolet (UV) photodetectors based on ternary Zn2GeO4 nanowire (NW) networks are demonstrated. The devices show fast response and recovery time, which is attributed to the unique NW-NW junction barrier dominated conductance for network devices. The UV-light induced b...
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| Main Authors: | , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
2012
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/94164 http://hdl.handle.net/10220/8091 |
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| Institution: | Nanyang Technological University |
| Language: | English |
| Summary: | Ultraviolet (UV) photodetectors based on ternary Zn2GeO4 nanowire (NW) networks are
demonstrated. The devices show fast response and recovery time, which is attributed to the unique
NW-NW junction barrier dominated conductance for network devices. The UV-light induced barrier
height modulation is much faster than the oxygen adsorption/desorption processes. The wide-band
gap Zn2GeO4 NWs also exhibit high wavelength selectivity for deep UV detection. We demonstrate
that ternary oxide NW-networks are ideal building blocks for nanoscale photodetectors with
superior performance and facile fabrication processes. |
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