Enhanced ferroelectric switching characteristics of P(VDF-TrFE) for organic memory devices

In the following work, we report an approach to shorten the ferroelectric switching time of P(VDF-TrFE) film by blending with as-synthesized gold nanoparticles. Ferroelectric hysteresis measurements give remnant polarization and coercive field of 8 μC/cm2 and 50 MV/m, respectively. A series of elect...

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Bibliographic Details
Main Authors: Kusuma, Damar Yoga, Nguyen, Chien A., Lee, Pooi See
Other Authors: School of Materials Science & Engineering
Format: Article
Language:English
Published: 2012
Subjects:
Online Access:https://hdl.handle.net/10356/94647
http://hdl.handle.net/10220/8509
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Institution: Nanyang Technological University
Language: English