Interfacial reacions of Ni on Si1-xGex (x=0.2, 0.3) at low temperature by rapid thermal annealing

• المؤلفون الرئيسيون: Pey, Kin Leong, Chattopadhyay, Sujay, Lee, Pooi See, Zhao, H. B., Choi, W. K., Antoniadis, D. A., Fitzgerald, Eugene A.
• مؤلفون آخرون: School of Materials Science & Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2012
• الموضوعات: DRNTU::Engineering::Materials
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/94799; http://hdl.handle.net/10220/8031

The interfacial reaction of Ni with relaxed Si1-xGex (x=0.2,0.3) films in the low temperature range, viz., 300–500 °C, has been investigated and compared with that of Ni with Si (i.e., x=0)....