Analysis of field-emission from a diamond-metal-vacuum triple junction

A quantitative electron tunneling model is constructed to calculate the electron emission from a diamond-metal-vacuum triple junction, including the effects of the field enhancement at the interface of the triple junction, the reduction on the barrier height and the negative electron affinity on the...

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Bibliographic Details
Main Authors: Sun, Sheng, Ang, Ricky Lay Kee
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2013
Subjects:
Online Access:https://hdl.handle.net/10356/94814
http://hdl.handle.net/10220/9299
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Institution: Nanyang Technological University
Language: English
Description
Summary:A quantitative electron tunneling model is constructed to calculate the electron emission from a diamond-metal-vacuum triple junction, including the effects of the field enhancement at the interface of the triple junction, the reduction on the barrier height and the negative electron affinity on the diamond surface. The difference between the emission processes with and without light exposure is also investigated.