Design exploration of hybrid CMOS and memristor circuit by new modified nodal analysis

Design of hybrid circuits and systems based on CMOS and nano-device requires rethinking of fundamental circuit analysis to aid design exploration. Conventional circuit analysis with modified nodal analysis (MNA) cannot consider new nano-devices such as memristor together with the traditional CMOS de...

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Main Authors: Fei, Wei, Yu, Hao, Zhang, Wei, Yeo, Kiat Seng
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2012
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Online Access:https://hdl.handle.net/10356/94859
http://hdl.handle.net/10220/8595
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-948592020-03-07T11:49:02Z Design exploration of hybrid CMOS and memristor circuit by new modified nodal analysis Fei, Wei Yu, Hao Zhang, Wei Yeo, Kiat Seng School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering Design of hybrid circuits and systems based on CMOS and nano-device requires rethinking of fundamental circuit analysis to aid design exploration. Conventional circuit analysis with modified nodal analysis (MNA) cannot consider new nano-devices such as memristor together with the traditional CMOS devices. This paper has introduced a new MNA method with magnetic flux (Φ) as new state variable. New SPICE-like circuit simulator is thereby developed for the design of hybrid CMOS and memristor circuits. A number of CMOS and memristor-based designs are explored, such as oscillator, chaotic circuit, programmable logic, analog-learning circuit, and crossbar memory, where their functionality, performance, reliability and power can be efficiently verified by the newly developed simulator. Specifically, one new 3-D-crossbar architecture with diode-added memristor is also proposed to improve integration density and to avoid sneak path during read-write operation. Accepted version 2012-09-20T07:24:33Z 2019-12-06T19:03:29Z 2012-09-20T07:24:33Z 2019-12-06T19:03:29Z 2011 2011 Journal Article Fei, W., Yu, H., Zhang, W., & Yeo, K. S. (2011). Design exploration of hybrid CMOS and memristor circuit by new modified nodal analysis. IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 20(6), 1012-1025. 1063-8210 https://hdl.handle.net/10356/94859 http://hdl.handle.net/10220/8595 10.1109/TVLSI.2011.2136443 157862 en IEEE transactions on very large scale integration (VLSI) systems © 2011 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: [http://dx.doi.org/10.1109/TVLSI.2011.2136443]. application/pdf
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering
spellingShingle DRNTU::Engineering::Electrical and electronic engineering
Fei, Wei
Yu, Hao
Zhang, Wei
Yeo, Kiat Seng
Design exploration of hybrid CMOS and memristor circuit by new modified nodal analysis
description Design of hybrid circuits and systems based on CMOS and nano-device requires rethinking of fundamental circuit analysis to aid design exploration. Conventional circuit analysis with modified nodal analysis (MNA) cannot consider new nano-devices such as memristor together with the traditional CMOS devices. This paper has introduced a new MNA method with magnetic flux (Φ) as new state variable. New SPICE-like circuit simulator is thereby developed for the design of hybrid CMOS and memristor circuits. A number of CMOS and memristor-based designs are explored, such as oscillator, chaotic circuit, programmable logic, analog-learning circuit, and crossbar memory, where their functionality, performance, reliability and power can be efficiently verified by the newly developed simulator. Specifically, one new 3-D-crossbar architecture with diode-added memristor is also proposed to improve integration density and to avoid sneak path during read-write operation.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Fei, Wei
Yu, Hao
Zhang, Wei
Yeo, Kiat Seng
format Article
author Fei, Wei
Yu, Hao
Zhang, Wei
Yeo, Kiat Seng
author_sort Fei, Wei
title Design exploration of hybrid CMOS and memristor circuit by new modified nodal analysis
title_short Design exploration of hybrid CMOS and memristor circuit by new modified nodal analysis
title_full Design exploration of hybrid CMOS and memristor circuit by new modified nodal analysis
title_fullStr Design exploration of hybrid CMOS and memristor circuit by new modified nodal analysis
title_full_unstemmed Design exploration of hybrid CMOS and memristor circuit by new modified nodal analysis
title_sort design exploration of hybrid cmos and memristor circuit by new modified nodal analysis
publishDate 2012
url https://hdl.handle.net/10356/94859
http://hdl.handle.net/10220/8595
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