Electromechanical properties and fatigue of antiferroelectric (Pb, La) (Zr, Sn, Ti)O3 thin film cantilevers fabricated by micromachining

Electromechanical cantilevers comprising antiferroelectric (Pb, La) (Zr, Sn, Ti)O3 (PLZST) thin films were fabricated through bulk micro-machining process on silicon wafers, and their electromechanical properties including strain-fatigue behaviors of the antiferroelectric thin film cantilevers were...

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Main Authors: Yao, Kui, Sritharan, Thirumany, Mirshekarloo, Meysam Sharifzadeh, Zhang, Lei
Other Authors: School of Materials Science & Engineering
Format: Article
Language:English
Published: 2013
Online Access:https://hdl.handle.net/10356/95138
http://hdl.handle.net/10220/9397
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-951382023-07-14T15:57:36Z Electromechanical properties and fatigue of antiferroelectric (Pb, La) (Zr, Sn, Ti)O3 thin film cantilevers fabricated by micromachining Yao, Kui Sritharan, Thirumany Mirshekarloo, Meysam Sharifzadeh Zhang, Lei School of Materials Science & Engineering Electromechanical cantilevers comprising antiferroelectric (Pb, La) (Zr, Sn, Ti)O3 (PLZST) thin films were fabricated through bulk micro-machining process on silicon wafers, and their electromechanical properties including strain-fatigue behaviors of the antiferroelectric thin film cantilevers were investigated. The antiferroelectric cantilevers showed the distinct digital actuation characteristics with the strain generated due to the antiferroelectric–ferroelectric transformation. The maximum displacement per unit voltage around the phase switching field reached 16.7 μm/V, significantly larger than the typical piezoelectric cantilevers. Moreover, the antiferroelectric PLZST cantilevers exhibited superior strain-fatigue resistance compared to the similar piezoelectric microstructures. These results show the promising future of antiferroelectric materials in micro electromechanical systems. Accepted version 2013-03-13T08:17:17Z 2019-12-06T19:09:00Z 2013-03-13T08:17:17Z 2019-12-06T19:09:00Z 2012 2012 Journal Article Mirshekarloo, M. S., Zhang, L., Yao, K., & Sritharan, T. (2012). Electromechanical properties and fatigue of antiferroelectric (Pb, La) (Zr, Sn, Ti)O3 thin film cantilevers fabricated by micromachining. Sensors and Actuators A: Physical, 187, 127-131. 0924-4247 https://hdl.handle.net/10356/95138 http://hdl.handle.net/10220/9397 10.1016/j.sna.2012.08.024 en Sensors and Actuators A: Physical © 2012 Elsevier B.V. This is the author created version of a work that has been peer reviewed and accepted for publication by Sensors and Actuators A: Physical, Elsevier B.V. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [http://dx.doi.org/10.1016/j.sna.2012.08.024]. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
description Electromechanical cantilevers comprising antiferroelectric (Pb, La) (Zr, Sn, Ti)O3 (PLZST) thin films were fabricated through bulk micro-machining process on silicon wafers, and their electromechanical properties including strain-fatigue behaviors of the antiferroelectric thin film cantilevers were investigated. The antiferroelectric cantilevers showed the distinct digital actuation characteristics with the strain generated due to the antiferroelectric–ferroelectric transformation. The maximum displacement per unit voltage around the phase switching field reached 16.7 μm/V, significantly larger than the typical piezoelectric cantilevers. Moreover, the antiferroelectric PLZST cantilevers exhibited superior strain-fatigue resistance compared to the similar piezoelectric microstructures. These results show the promising future of antiferroelectric materials in micro electromechanical systems.
author2 School of Materials Science & Engineering
author_facet School of Materials Science & Engineering
Yao, Kui
Sritharan, Thirumany
Mirshekarloo, Meysam Sharifzadeh
Zhang, Lei
format Article
author Yao, Kui
Sritharan, Thirumany
Mirshekarloo, Meysam Sharifzadeh
Zhang, Lei
spellingShingle Yao, Kui
Sritharan, Thirumany
Mirshekarloo, Meysam Sharifzadeh
Zhang, Lei
Electromechanical properties and fatigue of antiferroelectric (Pb, La) (Zr, Sn, Ti)O3 thin film cantilevers fabricated by micromachining
author_sort Yao, Kui
title Electromechanical properties and fatigue of antiferroelectric (Pb, La) (Zr, Sn, Ti)O3 thin film cantilevers fabricated by micromachining
title_short Electromechanical properties and fatigue of antiferroelectric (Pb, La) (Zr, Sn, Ti)O3 thin film cantilevers fabricated by micromachining
title_full Electromechanical properties and fatigue of antiferroelectric (Pb, La) (Zr, Sn, Ti)O3 thin film cantilevers fabricated by micromachining
title_fullStr Electromechanical properties and fatigue of antiferroelectric (Pb, La) (Zr, Sn, Ti)O3 thin film cantilevers fabricated by micromachining
title_full_unstemmed Electromechanical properties and fatigue of antiferroelectric (Pb, La) (Zr, Sn, Ti)O3 thin film cantilevers fabricated by micromachining
title_sort electromechanical properties and fatigue of antiferroelectric (pb, la) (zr, sn, ti)o3 thin film cantilevers fabricated by micromachining
publishDate 2013
url https://hdl.handle.net/10356/95138
http://hdl.handle.net/10220/9397
_version_ 1773551252885471232