Ultrahigh-performance solar-blind photodetectors based on individual single-crystalline In2Ge2O7 nanobelts
Solar-blind photodetectors are designed from individual In2Ge2O7 nanobelts using a standard photolithography technique. The detectors demonstrated high sensitivity and selectivity towards the solar-blind spectrum, fast response and decay times ∼ 3 ms, high responsivity ∼ 3.9 × 10^5 A W^−1, and high...
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| Main Authors: | , , , , , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
2012
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/95150 http://hdl.handle.net/10220/8525 |
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| Institution: | Nanyang Technological University |
| Language: | English |
| Summary: | Solar-blind photodetectors are designed from individual In2Ge2O7 nanobelts using a standard photolithography technique. The detectors demonstrated high sensitivity and selectivity towards the solar-blind spectrum, fast response and decay times ∼ 3 ms, high responsivity ∼ 3.9 × 10^5 A W^−1, and high quantum efficiency ∼2.0 × 10^8%. |
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