Monolithic integration of III-V nanowire with photonic crystal microcavity for vertical light emission

A novel photonic structure formed by the monolithic integration of a vertical III-V nanowire on top of a L3 two-dimensional photonic crystal microcavity is proposed to enhance light emission from the nanowire. The impact on the nanowire spontaneous emission rate is evaluated by calculating the spont...

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Main Authors: Larrue, Alexandre, Wilhelm, Christophe, Vest, Gwenaelle, Combrié, Sylvain, Alfredo, De Rossi, Soci, Cesare
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2013
Online Access:https://hdl.handle.net/10356/95326
http://hdl.handle.net/10220/9147
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-953262020-03-07T13:57:28Z Monolithic integration of III-V nanowire with photonic crystal microcavity for vertical light emission Larrue, Alexandre Wilhelm, Christophe Vest, Gwenaelle Combrié, Sylvain Alfredo, De Rossi Soci, Cesare School of Electrical and Electronic Engineering A novel photonic structure formed by the monolithic integration of a vertical III-V nanowire on top of a L3 two-dimensional photonic crystal microcavity is proposed to enhance light emission from the nanowire. The impact on the nanowire spontaneous emission rate is evaluated by calculating the spontaneous emission factor β, and the material gain at threshold is used as a figure of merit of this vertical emitting nanolaser. An optimal design is identified for a GaAs nanowire geometry with r = 155 nm and L~1.1 μm, where minimum gain at threshold (gth~13×10 3 cm−1) and large spontaneous emission factor (β~0.3) are simultaneously achieved. Modification of the directivity of the L3 photonic crystal cavity via the band-folding principle is employed to further optimize the far-field radiation pattern and to increase the directivity of the device. These results lay the foundation for a new approach toward large-scale integration of vertical emitting nanolasers and may enable applications such as intra-chip optical interconnects. Published version 2013-02-19T03:58:40Z 2019-12-06T19:12:38Z 2013-02-19T03:58:40Z 2019-12-06T19:12:38Z 2012 2012 Journal Article Larrue, A., Wilhelm, C., Vest, G., Combrié, S., Alfredo, D. R., & Soci, C. (2012). Monolithic integration of III-V nanowire with photonic crystal microcavity for vertical light emission. Optics Express, 20(7), 7758-7770. 1094-4087 https://hdl.handle.net/10356/95326 http://hdl.handle.net/10220/9147 10.1364/OE.20.007758 en Optics Express © 2012 Optical Society of America. This paper was published in Optics Express and is made available as an electronic reprint (preprint) with permission of Optical Society of America. The paper can be found at the following official DOI: [http://dx.doi.org/10.1364/OE.20.007758]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. application/pdf
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
description A novel photonic structure formed by the monolithic integration of a vertical III-V nanowire on top of a L3 two-dimensional photonic crystal microcavity is proposed to enhance light emission from the nanowire. The impact on the nanowire spontaneous emission rate is evaluated by calculating the spontaneous emission factor β, and the material gain at threshold is used as a figure of merit of this vertical emitting nanolaser. An optimal design is identified for a GaAs nanowire geometry with r = 155 nm and L~1.1 μm, where minimum gain at threshold (gth~13×10 3 cm−1) and large spontaneous emission factor (β~0.3) are simultaneously achieved. Modification of the directivity of the L3 photonic crystal cavity via the band-folding principle is employed to further optimize the far-field radiation pattern and to increase the directivity of the device. These results lay the foundation for a new approach toward large-scale integration of vertical emitting nanolasers and may enable applications such as intra-chip optical interconnects.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Larrue, Alexandre
Wilhelm, Christophe
Vest, Gwenaelle
Combrié, Sylvain
Alfredo, De Rossi
Soci, Cesare
format Article
author Larrue, Alexandre
Wilhelm, Christophe
Vest, Gwenaelle
Combrié, Sylvain
Alfredo, De Rossi
Soci, Cesare
spellingShingle Larrue, Alexandre
Wilhelm, Christophe
Vest, Gwenaelle
Combrié, Sylvain
Alfredo, De Rossi
Soci, Cesare
Monolithic integration of III-V nanowire with photonic crystal microcavity for vertical light emission
author_sort Larrue, Alexandre
title Monolithic integration of III-V nanowire with photonic crystal microcavity for vertical light emission
title_short Monolithic integration of III-V nanowire with photonic crystal microcavity for vertical light emission
title_full Monolithic integration of III-V nanowire with photonic crystal microcavity for vertical light emission
title_fullStr Monolithic integration of III-V nanowire with photonic crystal microcavity for vertical light emission
title_full_unstemmed Monolithic integration of III-V nanowire with photonic crystal microcavity for vertical light emission
title_sort monolithic integration of iii-v nanowire with photonic crystal microcavity for vertical light emission
publishDate 2013
url https://hdl.handle.net/10356/95326
http://hdl.handle.net/10220/9147
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