Electrostatic effects and band bending in doped topological insulators

• المؤلفون الرئيسيون: Galanakis, Dimitrios., Stanescu, Tudor D.
• مؤلفون آخرون: School of Physical and Mathematical Sciences
• التنسيق: مقال
• اللغة: English
• منشور في: 2013
• الموضوعات: DRNTU::Science::Physics::Electricity and magnetism
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/95366; http://hdl.handle.net/10220/9242

We investigate the electrostatic effects in doped topological insulators by developing a self-consistent scheme for an interacting tight-binding model. The presence of bulk carriers, in addition to surface electrons, generates an intrinsic inhomogeneous charge density in the vicinity of the surface...