Electrostatic effects and band bending in doped topological insulators

We investigate the electrostatic effects in doped topological insulators by developing a self-consistent scheme for an interacting tight-binding model. The presence of bulk carriers, in addition to surface electrons, generates an intrinsic inhomogeneous charge density in the vicinity of the surface...

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Bibliographic Details
Main Authors: Galanakis, Dimitrios., Stanescu, Tudor D.
Other Authors: School of Physical and Mathematical Sciences
Format: Article
Language:English
Published: 2013
Subjects:
Online Access:https://hdl.handle.net/10356/95366
http://hdl.handle.net/10220/9242
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Institution: Nanyang Technological University
Language: English

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