Electrostatic effects and band bending in doped topological insulators
We investigate the electrostatic effects in doped topological insulators by developing a self-consistent scheme for an interacting tight-binding model. The presence of bulk carriers, in addition to surface electrons, generates an intrinsic inhomogeneous charge density in the vicinity of the surface...
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Main Authors: | Galanakis, Dimitrios., Stanescu, Tudor D. |
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Other Authors: | School of Physical and Mathematical Sciences |
Format: | Article |
Language: | English |
Published: |
2013
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/95366 http://hdl.handle.net/10220/9242 |
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Institution: | Nanyang Technological University |
Language: | English |
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