Electrostatic effects and band bending in doped topological insulators
We investigate the electrostatic effects in doped topological insulators by developing a self-consistent scheme for an interacting tight-binding model. The presence of bulk carriers, in addition to surface electrons, generates an intrinsic inhomogeneous charge density in the vicinity of the surface...
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| Main Authors: | , |
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| 格式: | Article |
| 語言: | English |
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2013
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| 在線閱讀: | https://hdl.handle.net/10356/95366 http://hdl.handle.net/10220/9242 |
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