Tailoring the lasing modes in semiconductor nanowire cavities using intrinsic self-absorption

Understanding the optical gain and mode-selection mechanisms in semiconductor nanowire (NW) lasers is key to the development of high-performance nanoscale oscillators, amplified semiconductor/plasmon lasers and single photon emitters, and so forth. Modification of semiconductor band structure/bandga...

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Main Authors: Liu, Xinfeng, Zhang, Qing, Xiong, Qihua, Sum, Tze Chien
Other Authors: School of Physical and Mathematical Sciences
Format: Article
Language:English
Published: 2013
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Online Access:https://hdl.handle.net/10356/95749
http://hdl.handle.net/10220/9471
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Institution: Nanyang Technological University
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spelling sg-ntu-dr.10356-957492023-02-28T19:24:36Z Tailoring the lasing modes in semiconductor nanowire cavities using intrinsic self-absorption Liu, Xinfeng Zhang, Qing Xiong, Qihua Sum, Tze Chien School of Physical and Mathematical Sciences School of Electrical and Electronic Engineering DRNTU::Science::Mathematics Understanding the optical gain and mode-selection mechanisms in semiconductor nanowire (NW) lasers is key to the development of high-performance nanoscale oscillators, amplified semiconductor/plasmon lasers and single photon emitters, and so forth. Modification of semiconductor band structure/bandgap through electric field modulation, elemental doping, or alloying semiconductors has so far gained limited success in achieving output mode tunability of the NW laser. One stifling issue is the considerable optical losses induced in the NW cavities by these extrinsic methods that limit their applicability. Herein we demonstrate a new optical self-feedback mechanism based on the intrinsic self-absorption of the gain media to achieve low-loss, room-temperature NW lasing with a high degree of mode selectivity (over 30 nm). The cadmium sulfide (CdS) NW lasing wavelength is continuously tunable from 489 to 520 nm as the length of the NWs increases from 4 to 25 μm. Our straightforward approach is widely applicable in most semiconductor or semiconductor/plasmonic NW cavities. Accepted version 2013-04-09T07:35:24Z 2019-12-06T19:20:46Z 2013-04-09T07:35:24Z 2019-12-06T19:20:46Z 2013 2013 Journal Article Liu, X., Zhang, Q., Xiong, Q., & Sum, T. C. (2013). Tailoring the Lasing Modes in Semiconductor Nanowire Cavities Using Intrinsic Self-Absorption. Nano Letters, 13(3), 1080-1085. 1530-6984 https://hdl.handle.net/10356/95749 http://hdl.handle.net/10220/9471 10.1021/nl304362u 169236 en Nano letters © 2013 American Chemical Society. This is the author created version of a work that has been peer reviewed and accepted for publication by Nano Letters, American Chemical Society. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [http://dx.doi.org/10.1021/nl304362u]. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic DRNTU::Science::Mathematics
spellingShingle DRNTU::Science::Mathematics
Liu, Xinfeng
Zhang, Qing
Xiong, Qihua
Sum, Tze Chien
Tailoring the lasing modes in semiconductor nanowire cavities using intrinsic self-absorption
description Understanding the optical gain and mode-selection mechanisms in semiconductor nanowire (NW) lasers is key to the development of high-performance nanoscale oscillators, amplified semiconductor/plasmon lasers and single photon emitters, and so forth. Modification of semiconductor band structure/bandgap through electric field modulation, elemental doping, or alloying semiconductors has so far gained limited success in achieving output mode tunability of the NW laser. One stifling issue is the considerable optical losses induced in the NW cavities by these extrinsic methods that limit their applicability. Herein we demonstrate a new optical self-feedback mechanism based on the intrinsic self-absorption of the gain media to achieve low-loss, room-temperature NW lasing with a high degree of mode selectivity (over 30 nm). The cadmium sulfide (CdS) NW lasing wavelength is continuously tunable from 489 to 520 nm as the length of the NWs increases from 4 to 25 μm. Our straightforward approach is widely applicable in most semiconductor or semiconductor/plasmonic NW cavities.
author2 School of Physical and Mathematical Sciences
author_facet School of Physical and Mathematical Sciences
Liu, Xinfeng
Zhang, Qing
Xiong, Qihua
Sum, Tze Chien
format Article
author Liu, Xinfeng
Zhang, Qing
Xiong, Qihua
Sum, Tze Chien
author_sort Liu, Xinfeng
title Tailoring the lasing modes in semiconductor nanowire cavities using intrinsic self-absorption
title_short Tailoring the lasing modes in semiconductor nanowire cavities using intrinsic self-absorption
title_full Tailoring the lasing modes in semiconductor nanowire cavities using intrinsic self-absorption
title_fullStr Tailoring the lasing modes in semiconductor nanowire cavities using intrinsic self-absorption
title_full_unstemmed Tailoring the lasing modes in semiconductor nanowire cavities using intrinsic self-absorption
title_sort tailoring the lasing modes in semiconductor nanowire cavities using intrinsic self-absorption
publishDate 2013
url https://hdl.handle.net/10356/95749
http://hdl.handle.net/10220/9471
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