Band gap opening of graphene by doping small boron nitride domains

• المؤلفون الرئيسيون: Fan, Xiaofeng, Shen, Zexiang, Kuo, Jer-Lai, Liu, A. Q.
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2013
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/95843; http://hdl.handle.net/10220/10742

Boron nitride (BN) domains are easily formed in the basal plane of graphene due to phase separation. With first-principles calculations, it is demonstrated theoretically that the band gap of graphene can be opened effectively around K (or K′) points by introducing small BN domains. It is also found...