A 60-V, > 225°C half-bridge driver for piezoelectric acoustic transducer, on SOI CMOS
This brief presents a high-voltage (HV) transducer driver to fulfill the requirement of the proposed high-data-rate down-hole acoustic telemetry system. The driver is targeted to drive a stack of piezoelectric disks modeled as a capacitive load of 0.3 μF and across a broadband from 600 Hz to 1.2 kHz...
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sg-ntu-dr.10356-959272020-03-07T14:02:45Z A 60-V, > 225°C half-bridge driver for piezoelectric acoustic transducer, on SOI CMOS Goh, Wang Ling Arasu, Muthukumaraswamy Annamalai Je, Minkyu Yu, Jun School of Electrical and Electronic Engineering This brief presents a high-voltage (HV) transducer driver to fulfill the requirement of the proposed high-data-rate down-hole acoustic telemetry system. The driver is targeted to drive a stack of piezoelectric disks modeled as a capacitive load of 0.3 μF and across a broadband from 600 Hz to 1.2 kHz. To ensure stability, the driver is designed as an open-loop system, comprising a dead-time controller, level shifters, gate drivers, and power MOSFETs. The driver is fabricated using the 1.0- μm silicon-on-insulator CMOS process and its performance is investigated up to 260 °C, far beyond the specified process limit of 225 °C. The experimental results also validated the functionality of the HV Class-D-type driver for voltages up to 60 V. 2013-07-12T06:02:36Z 2019-12-06T19:23:26Z 2013-07-12T06:02:36Z 2019-12-06T19:23:26Z 2012 2012 Journal Article Yu, J., Goh, W. L., Arasu, M. A., & Je, M. (2012). A 60-V, > 225°C Half-Bridge Driver for Piezoelectric Acoustic Transducer, on SOI CMOS. IEEE Transactions on Circuits and Systems II: Express Briefs, 59(11), 771-775. 1549-7747 https://hdl.handle.net/10356/95927 http://hdl.handle.net/10220/11320 10.1109/TCSII.2012.2228396 en IEEE transactions on circuits and systems II : express briefs © 2012 IEEE. |
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This brief presents a high-voltage (HV) transducer driver to fulfill the requirement of the proposed high-data-rate down-hole acoustic telemetry system. The driver is targeted to drive a stack of piezoelectric disks modeled as a capacitive load of 0.3 μF and across a broadband from 600 Hz to 1.2 kHz. To ensure stability, the driver is designed as an open-loop system, comprising a dead-time controller, level shifters, gate drivers, and power MOSFETs. The driver is fabricated using the 1.0- μm silicon-on-insulator CMOS process and its performance is investigated up to 260 °C, far beyond the specified process limit of 225 °C. The experimental results also validated the functionality of the HV Class-D-type driver for voltages up to 60 V. |
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School of Electrical and Electronic Engineering |
| author_facet |
School of Electrical and Electronic Engineering Goh, Wang Ling Arasu, Muthukumaraswamy Annamalai Je, Minkyu Yu, Jun |
| format |
Article |
| author |
Goh, Wang Ling Arasu, Muthukumaraswamy Annamalai Je, Minkyu Yu, Jun |
| spellingShingle |
Goh, Wang Ling Arasu, Muthukumaraswamy Annamalai Je, Minkyu Yu, Jun A 60-V, > 225°C half-bridge driver for piezoelectric acoustic transducer, on SOI CMOS |
| author_sort |
Goh, Wang Ling |
| title |
A 60-V, > 225°C half-bridge driver for piezoelectric acoustic transducer, on SOI CMOS |
| title_short |
A 60-V, > 225°C half-bridge driver for piezoelectric acoustic transducer, on SOI CMOS |
| title_full |
A 60-V, > 225°C half-bridge driver for piezoelectric acoustic transducer, on SOI CMOS |
| title_fullStr |
A 60-V, > 225°C half-bridge driver for piezoelectric acoustic transducer, on SOI CMOS |
| title_full_unstemmed |
A 60-V, > 225°C half-bridge driver for piezoelectric acoustic transducer, on SOI CMOS |
| title_sort |
60-v, > 225°c half-bridge driver for piezoelectric acoustic transducer, on soi cmos |
| publishDate |
2013 |
| url |
https://hdl.handle.net/10356/95927 http://hdl.handle.net/10220/11320 |
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1681035838118428672 |