Strong green emission in ZnO films after H2 surface treatment

Using a two-step fabrication technique (pulsed laser deposition (PLD) and H2 surface treatment), we fabricated ZnO thin films that could emit ultra-strong green emission with coexistence of random lasing phenomenon. After PLD deposition, the as-prepared undoped ZnO thin films (200–500 nm) were annea...

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Main Authors: Li, T., Herng, T. S., Liang, H. K., Bao, N. N., Wong, J. I., Xue, J. M., Chen, Tupei, Ding, Jun
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2013
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Online Access:https://hdl.handle.net/10356/95985
http://hdl.handle.net/10220/11405
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-959852020-03-07T14:02:45Z Strong green emission in ZnO films after H2 surface treatment Li, T. Herng, T. S. Liang, H. K. Bao, N. N. Wong, J. I. Xue, J. M. Chen, Tupei Ding, Jun School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering Using a two-step fabrication technique (pulsed laser deposition (PLD) and H2 surface treatment), we fabricated ZnO thin films that could emit ultra-strong green emission with coexistence of random lasing phenomenon. After PLD deposition, the as-prepared undoped ZnO thin films (200–500 nm) were annealed in Ar 95%–H25% ambient at 500 °C. The H2 treatment led to the formation of a porous structure that creates substantial optical cavities (diameter ~1.3 µm). Surprisingly, these optical cavities tremendously amplified the green emission rather than ultraviolet (UV) emission. There was insignificant change in emission intensity after high-temperature annealing (700 °C) in O2 and acetone dipping, indicating the samples are thermally and chemically stable. The samples exhibited a high quantum yield of 32%. We studied the origin of this ultra-strong green emission using low-temperature photoluminescence, extensive structural study and cyclic annealing. The results suggested that neither hydrogen nor VO plays a role in green emission. The green emission was attributed mainly to the complex defects and the presence of structural defects in the porous structure. In addition, we demonstrated the feasibility of large-scale green emission ZnO fabrication via micro-size patterning, paving a way to practical optoelectronic applications. 2013-07-15T04:39:24Z 2019-12-06T19:24:02Z 2013-07-15T04:39:24Z 2019-12-06T19:24:02Z 2012 2012 Journal Article Li, T., Herng, T. S., Liang, H. K., Bao, N. N., Chen, T., Wong, J. I., et al. (2012). Strong green emission in ZnO films after H 2 surface treatment. Journal of physics D : applied physics, 45(18). https://hdl.handle.net/10356/95985 http://hdl.handle.net/10220/11405 10.1088/0022-3727/45/18/185102 en Journal of physics D : applied physics © 2012 IOP Publishing Ltd.
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering
spellingShingle DRNTU::Engineering::Electrical and electronic engineering
Li, T.
Herng, T. S.
Liang, H. K.
Bao, N. N.
Wong, J. I.
Xue, J. M.
Chen, Tupei
Ding, Jun
Strong green emission in ZnO films after H2 surface treatment
description Using a two-step fabrication technique (pulsed laser deposition (PLD) and H2 surface treatment), we fabricated ZnO thin films that could emit ultra-strong green emission with coexistence of random lasing phenomenon. After PLD deposition, the as-prepared undoped ZnO thin films (200–500 nm) were annealed in Ar 95%–H25% ambient at 500 °C. The H2 treatment led to the formation of a porous structure that creates substantial optical cavities (diameter ~1.3 µm). Surprisingly, these optical cavities tremendously amplified the green emission rather than ultraviolet (UV) emission. There was insignificant change in emission intensity after high-temperature annealing (700 °C) in O2 and acetone dipping, indicating the samples are thermally and chemically stable. The samples exhibited a high quantum yield of 32%. We studied the origin of this ultra-strong green emission using low-temperature photoluminescence, extensive structural study and cyclic annealing. The results suggested that neither hydrogen nor VO plays a role in green emission. The green emission was attributed mainly to the complex defects and the presence of structural defects in the porous structure. In addition, we demonstrated the feasibility of large-scale green emission ZnO fabrication via micro-size patterning, paving a way to practical optoelectronic applications.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Li, T.
Herng, T. S.
Liang, H. K.
Bao, N. N.
Wong, J. I.
Xue, J. M.
Chen, Tupei
Ding, Jun
format Article
author Li, T.
Herng, T. S.
Liang, H. K.
Bao, N. N.
Wong, J. I.
Xue, J. M.
Chen, Tupei
Ding, Jun
author_sort Li, T.
title Strong green emission in ZnO films after H2 surface treatment
title_short Strong green emission in ZnO films after H2 surface treatment
title_full Strong green emission in ZnO films after H2 surface treatment
title_fullStr Strong green emission in ZnO films after H2 surface treatment
title_full_unstemmed Strong green emission in ZnO films after H2 surface treatment
title_sort strong green emission in zno films after h2 surface treatment
publishDate 2013
url https://hdl.handle.net/10356/95985
http://hdl.handle.net/10220/11405
_version_ 1681042015863701504