The weak π − π interaction originated resonant tunneling and fast switching in the carbon based electronic devices

The weak π − π interaction originated resonant tunneling and fast switching in the carbon based electronic devices

By means of the nonequilibrium Green's functions and the density functional theory, we have investigated the electronic transport properties of C60 based electronic device with different intermolecular interactions. It is found that the electronic transport properties vary with the types of the...

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Main Authors: He, Jun, Chen, Ke-Qiu, Sun, Changqing
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2013
Subjects:
DRNTU::Engineering::Electrical and electronic engineering
Online Access:https://hdl.handle.net/10356/96217
http://hdl.handle.net/10220/10235
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-962172020-03-07T14:02:41Z The weak π − π interaction originated resonant tunneling and fast switching in the carbon based electronic devices He, Jun Chen, Ke-Qiu Sun, Changqing School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering By means of the nonequilibrium Green's functions and the density functional theory, we have investigated the electronic transport properties of C60 based electronic device with different intermolecular interactions. It is found that the electronic transport properties vary with the types of the interaction between two C60 molecules. A fast electrical switching behavior based on negative differential resistance has been found when two molecules are coupled by the weak π − π interaction. Compared to the solid bonding, the weak interaction is found to induce resonant tunneling, which is responsible for the fast response to the applied electric field and hence the velocity of switching. Published version 2013-06-12T03:40:56Z 2019-12-06T19:27:24Z 2013-06-12T03:40:56Z 2019-12-06T19:27:24Z 2012 2012 Journal Article He, J., Chen, K.-Q., & Sun, C. (2012). The weak π − π interaction originated resonant tunneling and fast switching in the carbon based electronic devices. AIP advances, 2(1), 012137-. 2158-3226 https://hdl.handle.net/10356/96217 http://hdl.handle.net/10220/10235 10.1063/1.3685777 en AIP advances © 2012 The Author(s). This paper was published in AIP Advances and is made available as an electronic reprint (preprint) with permission of the author(s). The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.3685777]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. application/pdf
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering
spellingShingle DRNTU::Engineering::Electrical and electronic engineering
He, Jun
Chen, Ke-Qiu
Sun, Changqing
The weak π − π interaction originated resonant tunneling and fast switching in the carbon based electronic devices
description By means of the nonequilibrium Green's functions and the density functional theory, we have investigated the electronic transport properties of C60 based electronic device with different intermolecular interactions. It is found that the electronic transport properties vary with the types of the interaction between two C60 molecules. A fast electrical switching behavior based on negative differential resistance has been found when two molecules are coupled by the weak π − π interaction. Compared to the solid bonding, the weak interaction is found to induce resonant tunneling, which is responsible for the fast response to the applied electric field and hence the velocity of switching.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
He, Jun
Chen, Ke-Qiu
Sun, Changqing
format Article
author He, Jun
Chen, Ke-Qiu
Sun, Changqing
author_sort He, Jun
title The weak π − π interaction originated resonant tunneling and fast switching in the carbon based electronic devices
title_short The weak π − π interaction originated resonant tunneling and fast switching in the carbon based electronic devices
title_full The weak π − π interaction originated resonant tunneling and fast switching in the carbon based electronic devices
title_fullStr The weak π − π interaction originated resonant tunneling and fast switching in the carbon based electronic devices
title_full_unstemmed The weak π − π interaction originated resonant tunneling and fast switching in the carbon based electronic devices
title_sort weak π − π interaction originated resonant tunneling and fast switching in the carbon based electronic devices
publishDate 2013
url https://hdl.handle.net/10356/96217
http://hdl.handle.net/10220/10235
_version_ 1681049228634226688

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