p-doping-free InGaN/GaN light-emitting diode driven by three-dimensional hole gas

p-doping-free InGaN/GaN light-emitting diode driven by three-dimensional hole gas

Here, GaN/AlxGa1-xN heterostructures with a graded AlN composition, completely lacking external p-doping, are designed and grown using metal-organic-chemical-vapour deposition (MOCVD) system to realize three-dimensional hole gas (3DHG). The existence of the 3DHG is confirmed by capacitance-voltage m...

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Bibliographic Details
Main Authors: Sun, Xiao Wei, Demir, Hilmi Volkan, Zhang, Zi-Hui, Kyaw, Zabu, Liu, Wei, Tan, Swee Tiam, Ji, Yun, Ju, Zhengang, Zhang, Xueliang
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2015
Online Access:https://hdl.handle.net/10356/96223
http://hdl.handle.net/10220/38580
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Institution: Nanyang Technological University
Language: English
Description
Summary:Here, GaN/AlxGa1-xN heterostructures with a graded AlN composition, completely lacking external p-doping, are designed and grown using metal-organic-chemical-vapour deposition (MOCVD) system to realize three-dimensional hole gas (3DHG). The existence of the 3DHG is confirmed by capacitance-voltage measurements. Based on this design, a p-doping-free InGaN/GaN light-emitting diode (LED) driven by the 3DHG is proposed and grown using MOCVD. The electroluminescence, which is attributed to the radiative recombination of injected electrons and holes in InGaN/GaN quantum wells, is observed from the fabricated p-doping-free devices. These results suggest that the 3DHG can be an alternative hole source for InGaN/GaN LEDs besides common Mg dopants.

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