Thickness-dependent evolutions of domain configuration and size in ferroelectric and ferroelectric-ferroelastic films

Non-monotonous thickness-dependent ferroelectric and ferroelectric-ferroelastic domain size scaling behaviors were revealed in ferroelectric films, including three distinct regions: (I) a classical 1/2 power law relationship for thick films, (II) a deviation from the 1/2 scaling relationship for...

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Main Authors: Huang, C. W., Chen, Z. H., Chen, Lang
Other Authors: School of Materials Science & Engineering
Format: Article
Language:English
Published: 2013
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Online Access:https://hdl.handle.net/10356/96431
http://hdl.handle.net/10220/9930
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-964312023-07-14T15:54:17Z Thickness-dependent evolutions of domain configuration and size in ferroelectric and ferroelectric-ferroelastic films Huang, C. W. Chen, Z. H. Chen, Lang School of Materials Science & Engineering DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films Non-monotonous thickness-dependent ferroelectric and ferroelectric-ferroelastic domain size scaling behaviors were revealed in ferroelectric films, including three distinct regions: (I) a classical 1/2 power law relationship for thick films, (II) a deviation from the 1/2 scaling relationship for an intermediate thickness range, and (III) an exponential increase in ultrathin films when decreasing the film thickness. The calculations indicate a much narrower region (II) in ferroelectric films with ferroelectric domains than that with ferroelectric-ferroelastic ones. As the film thickness decreases, the stable domain pattern also changes from a ferroelectric-ferroelastic domain to a ferroelectric one, which leads to the divergence of domain size scaling. Published version 2013-05-13T07:13:29Z 2019-12-06T19:30:40Z 2013-05-13T07:13:29Z 2019-12-06T19:30:40Z 2013 2013 Journal Article Huang, C. W., Chen, Z. H., & Chen, L. (2013). Thickness-dependent evolutions of domain configuration and size in ferroelectric and ferroelectric-ferroelastic films. Journal of Applied Physics, 113(9). 00218979 https://hdl.handle.net/10356/96431 http://hdl.handle.net/10220/9930 10.1063/1.4794005 en Journal of applied physics © 2013 American Institute of Physics. This paper was published in Journal of Applied Physics and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: http://dx.doi.org/10.1063/1.4794005. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
spellingShingle DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
Huang, C. W.
Chen, Z. H.
Chen, Lang
Thickness-dependent evolutions of domain configuration and size in ferroelectric and ferroelectric-ferroelastic films
description Non-monotonous thickness-dependent ferroelectric and ferroelectric-ferroelastic domain size scaling behaviors were revealed in ferroelectric films, including three distinct regions: (I) a classical 1/2 power law relationship for thick films, (II) a deviation from the 1/2 scaling relationship for an intermediate thickness range, and (III) an exponential increase in ultrathin films when decreasing the film thickness. The calculations indicate a much narrower region (II) in ferroelectric films with ferroelectric domains than that with ferroelectric-ferroelastic ones. As the film thickness decreases, the stable domain pattern also changes from a ferroelectric-ferroelastic domain to a ferroelectric one, which leads to the divergence of domain size scaling.
author2 School of Materials Science & Engineering
author_facet School of Materials Science & Engineering
Huang, C. W.
Chen, Z. H.
Chen, Lang
format Article
author Huang, C. W.
Chen, Z. H.
Chen, Lang
author_sort Huang, C. W.
title Thickness-dependent evolutions of domain configuration and size in ferroelectric and ferroelectric-ferroelastic films
title_short Thickness-dependent evolutions of domain configuration and size in ferroelectric and ferroelectric-ferroelastic films
title_full Thickness-dependent evolutions of domain configuration and size in ferroelectric and ferroelectric-ferroelastic films
title_fullStr Thickness-dependent evolutions of domain configuration and size in ferroelectric and ferroelectric-ferroelastic films
title_full_unstemmed Thickness-dependent evolutions of domain configuration and size in ferroelectric and ferroelectric-ferroelastic films
title_sort thickness-dependent evolutions of domain configuration and size in ferroelectric and ferroelectric-ferroelastic films
publishDate 2013
url https://hdl.handle.net/10356/96431
http://hdl.handle.net/10220/9930
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