Thickness-dependent evolutions of domain configuration and size in ferroelectric and ferroelectric-ferroelastic films

• المؤلفون الرئيسيون: Huang, C. W., Chen, Z. H., Chen, Lang
• مؤلفون آخرون: School of Materials Science & Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2013
• الموضوعات: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/96431; http://hdl.handle.net/10220/9930

Non-monotonous thickness-dependent ferroelectric and ferroelectric-ferroelastic domain size scaling behaviors were revealed in ferroelectric films, including three distinct regions: (I) a classical 1/2 power law relationship for thick films, (II) a deviation from the 1/2 scaling relationship for...