Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer

This work reports both experimental and theoretical studies on the InGaN/GaN light-emitting diodes (LEDs) with optical output power and external quantum efficiency (EQE) levels substantially enhanced by incorporating p-GaN/n-GaN/p-GaN/n-GaN/p-GaN (PNPNP-GaN) current spreading layers in p-GaN. Ea...

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Main Authors:	Sun, Xiaowei, Zhang, Zi-Hui, Tan, Swee Tiam, Liu, Wei, Ju, Zhengang, Zheng, Ke, Kyaw, Zabu, Ji, Yun, Hasanov, Namig, Demir, Hilmi Volkan
Other Authors:	School of Electrical and Electronic Engineering
Format:	Article
Language:	English
Published:	2013
Subjects:	DRNTU::Engineering::Electrical and electronic engineering::Antennas, wave guides, microwaves, radar, radio
Online Access:	https://hdl.handle.net/10356/96545 http://hdl.handle.net/10220/9923
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Institution:	Nanyang Technological University
Language:	English

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spelling	sg-ntu-dr.10356-965452023-02-28T19:40:28Z Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer Sun, Xiaowei Zhang, Zi-Hui Tan, Swee Tiam Liu, Wei Ju, Zhengang Zheng, Ke Kyaw, Zabu Ji, Yun Hasanov, Namig Demir, Hilmi Volkan School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Antennas, wave guides, microwaves, radar, radio This work reports both experimental and theoretical studies on the InGaN/GaN light-emitting diodes (LEDs) with optical output power and external quantum efficiency (EQE) levels substantially enhanced by incorporating p-GaN/n-GaN/p-GaN/n-GaN/p-GaN (PNPNP-GaN) current spreading layers in p-GaN. Each thin n-GaN layer sandwiched in the PNPNP-GaN structure is completely depleted due to the built-in electric field in the PNPNP-GaN junctions, and the ionized donors in these n-GaN layers serve as the hole spreaders. As a result, the electrical performance of the proposed device is improved and the optical output power and EQE are enhanced. Published version 2013-05-13T01:56:08Z 2019-12-06T19:32:16Z 2013-05-13T01:56:08Z 2019-12-06T19:32:16Z 2013 2013 Journal Article Zhang, Z. H., Tan, S. T., Liu, W., Ju, Z., Zheng, K., Kyaw, Z., et al. (2013). Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer. Optics Express, 21(4), 4958-4969. 1094-4087 https://hdl.handle.net/10356/96545 http://hdl.handle.net/10220/9923 10.1364/OE.21.004958 en Optics express © 2013 Optical Society of America. This paper was published in Optics Express and is made available as an electronic reprint (preprint) with permission of Optical Society of America. The paper can be found at the following official DOI: http://dx.doi.org/10.1364/OE.21.004958. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. application/pdf
institution	Nanyang Technological University
building	NTU Library
continent	Asia
country	Singapore Singapore
content_provider	NTU Library
collection	DR-NTU
language	English
topic	DRNTU::Engineering::Electrical and electronic engineering::Antennas, wave guides, microwaves, radar, radio
spellingShingle	DRNTU::Engineering::Electrical and electronic engineering::Antennas, wave guides, microwaves, radar, radio Sun, Xiaowei Zhang, Zi-Hui Tan, Swee Tiam Liu, Wei Ju, Zhengang Zheng, Ke Kyaw, Zabu Ji, Yun Hasanov, Namig Demir, Hilmi Volkan Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer
description	This work reports both experimental and theoretical studies on the InGaN/GaN light-emitting diodes (LEDs) with optical output power and external quantum efficiency (EQE) levels substantially enhanced by incorporating p-GaN/n-GaN/p-GaN/n-GaN/p-GaN (PNPNP-GaN) current spreading layers in p-GaN. Each thin n-GaN layer sandwiched in the PNPNP-GaN structure is completely depleted due to the built-in electric field in the PNPNP-GaN junctions, and the ionized donors in these n-GaN layers serve as the hole spreaders. As a result, the electrical performance of the proposed device is improved and the optical output power and EQE are enhanced.
author2	School of Electrical and Electronic Engineering
author_facet	School of Electrical and Electronic Engineering Sun, Xiaowei Zhang, Zi-Hui Tan, Swee Tiam Liu, Wei Ju, Zhengang Zheng, Ke Kyaw, Zabu Ji, Yun Hasanov, Namig Demir, Hilmi Volkan
format	Article
author	Sun, Xiaowei Zhang, Zi-Hui Tan, Swee Tiam Liu, Wei Ju, Zhengang Zheng, Ke Kyaw, Zabu Ji, Yun Hasanov, Namig Demir, Hilmi Volkan
author_sort	Sun, Xiaowei
title	Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer
title_short	Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer
title_full	Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer
title_fullStr	Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer
title_full_unstemmed	Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer
title_sort	improved ingan/gan light-emitting diodes with a p-gan/n-gan/p-gan/n-gan/p-gan current-spreading layer
publishDate	2013
url	https://hdl.handle.net/10356/96545 http://hdl.handle.net/10220/9923
_version_	1759854523592998912

Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer

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