Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer

• المؤلفون الرئيسيون: Sun, Xiaowei, Zhang, Zi-Hui, Tan, Swee Tiam, Liu, Wei, Ju, Zhengang, Zheng, Ke, Kyaw, Zabu, Ji, Yun, Hasanov, Namig, Demir, Hilmi Volkan
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2013
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Antennas, wave guides, microwaves, radar, radio
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/96545; http://hdl.handle.net/10220/9923

This work reports both experimental and theoretical studies on the InGaN/GaN light-emitting diodes (LEDs) with optical output power and external quantum efficiency (EQE) levels substantially enhanced by incorporating p-GaN/n-GaN/p-GaN/n-GaN/p-GaN (PNPNP-GaN) current spreading layers in p-GaN. Ea...