Fabrication and characterization of carbon nanotube intermolecular p–n junctions

We demonstrate carbon nanotube intermolecular p–n junctions and study the electron transport mechanisms. Thermionic emission is the main transport mechanisms under forward bias while tunneling dominates the electron transport of the reverse bias condition. A kink point appearing on the plot of ln(I/...

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Main Authors: Li, H., Zhang, Q., Yap, Chin Chong, Tay, Beng Kang
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2013
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Online Access:https://hdl.handle.net/10356/96564
http://hdl.handle.net/10220/10322
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-965642020-03-07T14:02:47Z Fabrication and characterization of carbon nanotube intermolecular p–n junctions Li, H. Zhang, Q. Yap, Chin Chong Tay, Beng Kang School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering We demonstrate carbon nanotube intermolecular p–n junctions and study the electron transport mechanisms. Thermionic emission is the main transport mechanisms under forward bias while tunneling dominates the electron transport of the reverse bias condition. A kink point appearing on the plot of ln(I/V2) versus 1/V indicates that the transport mechanism experiences a transition from direct tunneling to the Fowler–Nordheim tunneling under the reverse bias condition. In contrast, the Arrhenius plot of the I–V curve at forward biases suggests that tunneling is more important than the thermionic emission below 50 K. 2013-06-13T04:13:38Z 2019-12-06T19:32:35Z 2013-06-13T04:13:38Z 2019-12-06T19:32:35Z 2012 2012 Journal Article Li, H., Zhang, Q., Yap, C. C., & Tay, B. K. (2012). Fabrication and characterization of carbon nanotube intermolecular p–n junctions. Solid-State Electronics, 77, 46-50. 0038-1101 https://hdl.handle.net/10356/96564 http://hdl.handle.net/10220/10322 10.1016/j.sse.2012.05.011 en Solid-state electronics © 2012 Elsevier Ltd.
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering
spellingShingle DRNTU::Engineering::Electrical and electronic engineering
Li, H.
Zhang, Q.
Yap, Chin Chong
Tay, Beng Kang
Fabrication and characterization of carbon nanotube intermolecular p–n junctions
description We demonstrate carbon nanotube intermolecular p–n junctions and study the electron transport mechanisms. Thermionic emission is the main transport mechanisms under forward bias while tunneling dominates the electron transport of the reverse bias condition. A kink point appearing on the plot of ln(I/V2) versus 1/V indicates that the transport mechanism experiences a transition from direct tunneling to the Fowler–Nordheim tunneling under the reverse bias condition. In contrast, the Arrhenius plot of the I–V curve at forward biases suggests that tunneling is more important than the thermionic emission below 50 K.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Li, H.
Zhang, Q.
Yap, Chin Chong
Tay, Beng Kang
format Article
author Li, H.
Zhang, Q.
Yap, Chin Chong
Tay, Beng Kang
author_sort Li, H.
title Fabrication and characterization of carbon nanotube intermolecular p–n junctions
title_short Fabrication and characterization of carbon nanotube intermolecular p–n junctions
title_full Fabrication and characterization of carbon nanotube intermolecular p–n junctions
title_fullStr Fabrication and characterization of carbon nanotube intermolecular p–n junctions
title_full_unstemmed Fabrication and characterization of carbon nanotube intermolecular p–n junctions
title_sort fabrication and characterization of carbon nanotube intermolecular p–n junctions
publishDate 2013
url https://hdl.handle.net/10356/96564
http://hdl.handle.net/10220/10322
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