Fabrication and characterization of carbon nanotube intermolecular p–n junctions
We demonstrate carbon nanotube intermolecular p–n junctions and study the electron transport mechanisms. Thermionic emission is the main transport mechanisms under forward bias while tunneling dominates the electron transport of the reverse bias condition. A kink point appearing on the plot of ln(I/...
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sg-ntu-dr.10356-965642020-03-07T14:02:47Z Fabrication and characterization of carbon nanotube intermolecular p–n junctions Li, H. Zhang, Q. Yap, Chin Chong Tay, Beng Kang School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering We demonstrate carbon nanotube intermolecular p–n junctions and study the electron transport mechanisms. Thermionic emission is the main transport mechanisms under forward bias while tunneling dominates the electron transport of the reverse bias condition. A kink point appearing on the plot of ln(I/V2) versus 1/V indicates that the transport mechanism experiences a transition from direct tunneling to the Fowler–Nordheim tunneling under the reverse bias condition. In contrast, the Arrhenius plot of the I–V curve at forward biases suggests that tunneling is more important than the thermionic emission below 50 K. 2013-06-13T04:13:38Z 2019-12-06T19:32:35Z 2013-06-13T04:13:38Z 2019-12-06T19:32:35Z 2012 2012 Journal Article Li, H., Zhang, Q., Yap, C. C., & Tay, B. K. (2012). Fabrication and characterization of carbon nanotube intermolecular p–n junctions. Solid-State Electronics, 77, 46-50. 0038-1101 https://hdl.handle.net/10356/96564 http://hdl.handle.net/10220/10322 10.1016/j.sse.2012.05.011 en Solid-state electronics © 2012 Elsevier Ltd. |
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DRNTU::Engineering::Electrical and electronic engineering Li, H. Zhang, Q. Yap, Chin Chong Tay, Beng Kang Fabrication and characterization of carbon nanotube intermolecular p–n junctions |
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We demonstrate carbon nanotube intermolecular p–n junctions and study the electron transport mechanisms. Thermionic emission is the main transport mechanisms under forward bias while tunneling dominates the electron transport of the reverse bias condition. A kink point appearing on the plot of ln(I/V2) versus 1/V indicates that the transport mechanism experiences a transition from direct tunneling to the Fowler–Nordheim tunneling under the reverse bias condition. In contrast, the Arrhenius plot of the I–V curve at forward biases suggests that tunneling is more important than the thermionic emission below 50 K. |
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School of Electrical and Electronic Engineering |
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School of Electrical and Electronic Engineering Li, H. Zhang, Q. Yap, Chin Chong Tay, Beng Kang |
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Article |
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Li, H. Zhang, Q. Yap, Chin Chong Tay, Beng Kang |
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Li, H. |
title |
Fabrication and characterization of carbon nanotube intermolecular p–n junctions |
title_short |
Fabrication and characterization of carbon nanotube intermolecular p–n junctions |
title_full |
Fabrication and characterization of carbon nanotube intermolecular p–n junctions |
title_fullStr |
Fabrication and characterization of carbon nanotube intermolecular p–n junctions |
title_full_unstemmed |
Fabrication and characterization of carbon nanotube intermolecular p–n junctions |
title_sort |
fabrication and characterization of carbon nanotube intermolecular p–n junctions |
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2013 |
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https://hdl.handle.net/10356/96564 http://hdl.handle.net/10220/10322 |
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1681038491846180864 |