Fabrication of graphene nanomesh by using an anodic aluminum oxide membrane as a template
Large-area graphene nanomesh (GNM) is prepared using a new and effective method, in which the O2 plasma treatment is used with an anodic aluminum oxide (AAO) membrane as an etch mask. By varying the pore size and cell wall thickness of the AAO membrane, GNM with tunable pore size and neck width can...
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sg-ntu-dr.10356-970872020-06-01T10:13:33Z Fabrication of graphene nanomesh by using an anodic aluminum oxide membrane as a template Zeng, Zhiyuan Huang, Xiao Yin, Zongyou Li, Hong Chen, Yang Li, Hai Zhang, Qing Ma, Jan Boey, Freddy Yin Chiang Zhang, Hua School of Electrical and Electronic Engineering School of Materials Science & Engineering Microelectronics Centre Large-area graphene nanomesh (GNM) is prepared using a new and effective method, in which the O2 plasma treatment is used with an anodic aluminum oxide (AAO) membrane as an etch mask. By varying the pore size and cell wall thickness of the AAO membrane, GNM with tunable pore size and neck width can be prepared. As proof of concept, a field-effect transistor with 15 nm neck width GNM as the conductive channel is fabricated, which exhibits p-type semiconducting behavior. 2013-06-17T07:29:12Z 2019-12-06T19:38:51Z 2013-06-17T07:29:12Z 2019-12-06T19:38:51Z 2012 2012 Journal Article Zeng, Z., Huang, X., Yin, Z., Li, H., Chen, Y., Li, H., et al. (2012). Fabrication of Graphene Nanomesh by Using an Anodic Aluminum Oxide Membrane as a Template. Advanced Materials, 24(30), 4138-4142. 1521-4095 https://hdl.handle.net/10356/97087 http://hdl.handle.net/10220/10461 10.1002/adma.201104281 en Advanced materials © 2012 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim. |
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Large-area graphene nanomesh (GNM) is prepared using a new and effective method, in which the O2 plasma treatment is used with an anodic aluminum oxide (AAO) membrane as an etch mask. By varying the pore size and cell wall thickness of the AAO membrane, GNM with tunable pore size and neck width can be prepared. As proof of concept, a field-effect transistor with 15 nm neck width GNM as the conductive channel is fabricated, which exhibits p-type semiconducting behavior. |
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School of Electrical and Electronic Engineering |
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School of Electrical and Electronic Engineering Zeng, Zhiyuan Huang, Xiao Yin, Zongyou Li, Hong Chen, Yang Li, Hai Zhang, Qing Ma, Jan Boey, Freddy Yin Chiang Zhang, Hua |
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Zeng, Zhiyuan Huang, Xiao Yin, Zongyou Li, Hong Chen, Yang Li, Hai Zhang, Qing Ma, Jan Boey, Freddy Yin Chiang Zhang, Hua |
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Zeng, Zhiyuan Huang, Xiao Yin, Zongyou Li, Hong Chen, Yang Li, Hai Zhang, Qing Ma, Jan Boey, Freddy Yin Chiang Zhang, Hua Fabrication of graphene nanomesh by using an anodic aluminum oxide membrane as a template |
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Zeng, Zhiyuan |
title |
Fabrication of graphene nanomesh by using an anodic aluminum oxide membrane as a template |
title_short |
Fabrication of graphene nanomesh by using an anodic aluminum oxide membrane as a template |
title_full |
Fabrication of graphene nanomesh by using an anodic aluminum oxide membrane as a template |
title_fullStr |
Fabrication of graphene nanomesh by using an anodic aluminum oxide membrane as a template |
title_full_unstemmed |
Fabrication of graphene nanomesh by using an anodic aluminum oxide membrane as a template |
title_sort |
fabrication of graphene nanomesh by using an anodic aluminum oxide membrane as a template |
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2013 |
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https://hdl.handle.net/10356/97087 http://hdl.handle.net/10220/10461 |
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1681059025516494848 |