Alternative resistive switching mechanism based on migration of charged counter-ions within conductive polymers

• المؤلفون الرئيسيون: Sim, R., Chan, Mei Yin, Wong, A. S. W., Lee, Pooi See
• مؤلفون آخرون: School of Materials Science & Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2013
• الموضوعات: DRNTU::Engineering::Chemical engineering::Polymers and polymer manufacture
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/97260; http://hdl.handle.net/10220/10481

In this paper, an alternative bi-stable resistive switching mechanism for non-volatile organic memory applications is reported. The memory device is formed from a sandwiched structure of Au/polyaniline:poly(4-styrenesulfonic acid) (PANI:PSSH)/ITO and operates via the migration of negatively charged...