A simple approach to form Ge nanocrystals embedded in amorphous Lu2O3 high-k gate dielectric by pulsed laser ablation
We have successfully developed a novel method to fabricate the memory structure of Ge nanocrystals embedded in amorphous Lu2O3 high-k dielectric using pulsed laser ablation. The mean size and aerial density of the Ge nanocrystals are estimated to be about 9 nm and 7 × 1011 cm−2, respectively. Good p...
Saved in:
| Main Authors: | , , , |
|---|---|
| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
2013
|
| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/97343 http://hdl.handle.net/10220/10483 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Institution: | Nanyang Technological University |
| Language: | English |
| id |
sg-ntu-dr.10356-97343 |
|---|---|
| record_format |
dspace |
| spelling |
sg-ntu-dr.10356-973432020-06-01T10:21:29Z A simple approach to form Ge nanocrystals embedded in amorphous Lu2O3 high-k gate dielectric by pulsed laser ablation Yuan, C. L. Darmawan, P. Setiawan, Y. Lee, Pooi See School of Materials Science & Engineering DRNTU::Engineering::Materials::Nanostructured materials We have successfully developed a novel method to fabricate the memory structure of Ge nanocrystals embedded in amorphous Lu2O3 high-k dielectric using pulsed laser ablation. The mean size and aerial density of the Ge nanocrystals are estimated to be about 9 nm and 7 × 1011 cm−2, respectively. Good performances in terms of large memory window and long data retention were observed. Our preparation method is simple, fast and economical. 2013-06-19T03:34:58Z 2019-12-06T19:41:41Z 2013-06-19T03:34:58Z 2019-12-06T19:41:41Z 2006 2006 Journal Article Yuan, C. L., Darmawan, P., Setiawan, Y., & Lee, P. S. (2006). A simple approach to form Ge nanocrystals embedded in amorphous Lu2O3 high-k gate dielectric by pulsed laser ablation. Europhysics Letters (EPL), 74(1), 177-180. 0295-5075 https://hdl.handle.net/10356/97343 http://hdl.handle.net/10220/10483 10.1209/epl/i2005-10505-4 en Europhysics letters (EPL) © 2006 EDP Sciences. |
| institution |
Nanyang Technological University |
| building |
NTU Library |
| country |
Singapore |
| collection |
DR-NTU |
| language |
English |
| topic |
DRNTU::Engineering::Materials::Nanostructured materials |
| spellingShingle |
DRNTU::Engineering::Materials::Nanostructured materials Yuan, C. L. Darmawan, P. Setiawan, Y. Lee, Pooi See A simple approach to form Ge nanocrystals embedded in amorphous Lu2O3 high-k gate dielectric by pulsed laser ablation |
| description |
We have successfully developed a novel method to fabricate the memory structure of Ge nanocrystals embedded in amorphous Lu2O3 high-k dielectric using pulsed laser ablation. The mean size and aerial density of the Ge nanocrystals are estimated to be about 9 nm and 7 × 1011 cm−2, respectively. Good performances in terms of large memory window and long data retention were observed. Our preparation method is simple, fast and economical. |
| author2 |
School of Materials Science & Engineering |
| author_facet |
School of Materials Science & Engineering Yuan, C. L. Darmawan, P. Setiawan, Y. Lee, Pooi See |
| format |
Article |
| author |
Yuan, C. L. Darmawan, P. Setiawan, Y. Lee, Pooi See |
| author_sort |
Yuan, C. L. |
| title |
A simple approach to form Ge nanocrystals embedded in amorphous Lu2O3 high-k gate dielectric by pulsed laser ablation |
| title_short |
A simple approach to form Ge nanocrystals embedded in amorphous Lu2O3 high-k gate dielectric by pulsed laser ablation |
| title_full |
A simple approach to form Ge nanocrystals embedded in amorphous Lu2O3 high-k gate dielectric by pulsed laser ablation |
| title_fullStr |
A simple approach to form Ge nanocrystals embedded in amorphous Lu2O3 high-k gate dielectric by pulsed laser ablation |
| title_full_unstemmed |
A simple approach to form Ge nanocrystals embedded in amorphous Lu2O3 high-k gate dielectric by pulsed laser ablation |
| title_sort |
simple approach to form ge nanocrystals embedded in amorphous lu2o3 high-k gate dielectric by pulsed laser ablation |
| publishDate |
2013 |
| url |
https://hdl.handle.net/10356/97343 http://hdl.handle.net/10220/10483 |
| _version_ |
1681057974369386496 |