SnO2 nanorod arrays : low temperature growth, surface modification and field emission properties
SnO2 nanorod arrays have been deposited on 4 inch SiO2/Si and Si wafers and stainless steel substrates by plasma-enhanced chemical vapor deposition without any high temperature treatment or additional catalysis. The SnO2 nanorods grow up from seed nanocrystals along the [110] preferential direction...
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sg-ntu-dr.10356-974502020-06-01T10:26:30Z SnO2 nanorod arrays : low temperature growth, surface modification and field emission properties Huang, Hui Lim, Chiew Keat Tse, Man Siu Guo, Jun Tan, Ooi Kiang School of Electrical and Electronic Engineering School of Materials Science & Engineering SnO2 nanorod arrays have been deposited on 4 inch SiO2/Si and Si wafers and stainless steel substrates by plasma-enhanced chemical vapor deposition without any high temperature treatment or additional catalysis. The SnO2 nanorods grow up from seed nanocrystals along the [110] preferential direction by a self-catalyzed vapor–solid growth mechanism. The surface of the SnO2 nanorods was modified by ZnO, Pt and Ni nanocrystals. After surface modification, the field emission properties of the SnO2 nanorod arrays are improved. The Ni nanocrystal with sharp tips and edges act as additional field emission sites to SnO2 nanorods and thus the Ni/SnO2/SiO2/Si outperforms other samples due to the synergistic effects of good conductivity and hierarchical sharp apexes. The field enhancement factor of the Ni/SnO2/SiO2/Si increased around 3 times while the turn-on field of 8.0 V μm−1 is about one third of the SnO2/SiO2/Si device. 2013-06-27T01:18:23Z 2019-12-06T19:42:54Z 2013-06-27T01:18:23Z 2019-12-06T19:42:54Z 2012 2012 Journal Article Huang, H., Lim, C. K., Tse, M. S., Guo, J., & Tan, O. K. (2012). SnO2 nanorod arrays: low temperature growth, surface modification and field emission properties. Nanoscale, 4(5), 1491-1496. 2040-3364 https://hdl.handle.net/10356/97450 http://hdl.handle.net/10220/10743 10.1039/c1nr10710k en Nanoscale © 2012 The Royal Society of Chemistry. |
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SnO2 nanorod arrays have been deposited on 4 inch SiO2/Si and Si wafers and stainless steel substrates by plasma-enhanced chemical vapor deposition without any high temperature treatment or additional catalysis. The SnO2 nanorods grow up from seed nanocrystals along the [110] preferential direction by a self-catalyzed vapor–solid growth mechanism. The surface of the SnO2 nanorods was modified by ZnO, Pt and Ni nanocrystals. After surface modification, the field emission properties of the SnO2 nanorod arrays are improved. The Ni nanocrystal with sharp tips and edges act as additional field emission sites to SnO2 nanorods and thus the Ni/SnO2/SiO2/Si outperforms other samples due to the synergistic effects of good conductivity and hierarchical sharp apexes. The field enhancement factor of the Ni/SnO2/SiO2/Si increased around 3 times while the turn-on field of 8.0 V μm−1 is about one third of the SnO2/SiO2/Si device. |
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School of Electrical and Electronic Engineering |
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School of Electrical and Electronic Engineering Huang, Hui Lim, Chiew Keat Tse, Man Siu Guo, Jun Tan, Ooi Kiang |
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Huang, Hui Lim, Chiew Keat Tse, Man Siu Guo, Jun Tan, Ooi Kiang |
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Huang, Hui Lim, Chiew Keat Tse, Man Siu Guo, Jun Tan, Ooi Kiang SnO2 nanorod arrays : low temperature growth, surface modification and field emission properties |
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Huang, Hui |
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SnO2 nanorod arrays : low temperature growth, surface modification and field emission properties |
title_short |
SnO2 nanorod arrays : low temperature growth, surface modification and field emission properties |
title_full |
SnO2 nanorod arrays : low temperature growth, surface modification and field emission properties |
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SnO2 nanorod arrays : low temperature growth, surface modification and field emission properties |
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SnO2 nanorod arrays : low temperature growth, surface modification and field emission properties |
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sno2 nanorod arrays : low temperature growth, surface modification and field emission properties |
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2013 |
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https://hdl.handle.net/10356/97450 http://hdl.handle.net/10220/10743 |
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