Enhancing charge-storage capacity of non-volatile memory devices using template-directed assembly of gold nanoparticles
We demonstrate the controlled fabrication of aggregates of gold nanoparticles as a means of enhancing the charge-storage capacity of metal–insulator–semiconductor (MIS) devices by up to 300% at a low biasing voltage of ±4 V. Aggregates of citrate stabilized gold nanoparticles were obtained by direct...
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| Main Authors: | , , , , |
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| 其他作者: | |
| 格式: | Article |
| 語言: | English |
| 出版: |
2013
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| 在線閱讀: | https://hdl.handle.net/10356/97479 http://hdl.handle.net/10220/10739 |
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| 機構: | Nanyang Technological University |
| 語言: | English |