Enhancing charge-storage capacity of non-volatile memory devices using template-directed assembly of gold nanoparticles
We demonstrate the controlled fabrication of aggregates of gold nanoparticles as a means of enhancing the charge-storage capacity of metal–insulator–semiconductor (MIS) devices by up to 300% at a low biasing voltage of ±4 V. Aggregates of citrate stabilized gold nanoparticles were obtained by direct...
Saved in:
| Main Authors: | , , , , |
|---|---|
| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
2013
|
| Online Access: | https://hdl.handle.net/10356/97479 http://hdl.handle.net/10220/10739 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Institution: | Nanyang Technological University |
| Language: | English |